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参数资料
| 型号： | NVT2008BQ |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 通用总线功能 |
| 英文描述： | Bidirectional voltage-level translator for open-drain and push-pull applications |
| 中文描述： | GTL TO TTL TRANSCEIVER, PQCC20 |
| 封装： | 2.50 X 4.50 MM, 0.85 MM HEIGHT, LEAD FREE, PLASTIC, MO-241, SOT764-1, VQFN-20 |
| 文件页数： | 15/26页 |
| 文件大小： | 459K |
| 代理商： | NVT2008BQ |
NVT2008_NVT2010
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 8 September 2010
15 of 26
NXP Semiconductors
NVT2008; NVT2010
Bidirectional voltage-level translator
12. Performance curves
t
PLH
up-translation is typically dominated by the RC time constant, i.e.,
C
L(tot)
×
R
PU
= 50 pF
×
197
Ω
= 9.85 ns, but the R
on
×
C
L(tot)
= 50 pF
×
5
Ω
= 0.250 ns.
t
PHL
is typically dominated by the external pull-down driver + R
on
, which is typically small
compared to the t
PLH
in an up-translation case.
Enable/disable times are dominated by the RC time constant on the EN pin since the
transistor turn off is on the order of ns, but the enable RC is on the order of ms.
Fall time is dominated by the external pull-down driver with only a slight R
on
addition.
Rise time is dominated by the R
PU
×
C
L
.
Skew time within the part is virtually non-existent, dominated by the difference in bond
wire lengths, which is typically small compared to the board-level routing differences.
Maximum data rate is dominated by the system capacitance and pull-up resistors.
(1) V
I(EN)
= 1.5 V; I
O
= 64 mA; V
I
= 0 V.
(2) V
I(EN)
= 4.5 V; I
O
= 15 mA; V
I
= 2.4 V.
(3) V
I(EN)
= 2.3 V; I
O
= 64 mA; V
I
= 0 V.
(4) V
I(EN)
= 3.0 V; I
O
= 64 mA; V
I
= 0 V.
(5) V
I(EN)
= 4.5 V; I
O
= 64 mA; V
I
= 0 V.
Fig 15. Typical capacitance versus propagation delay
(1) V
I(EN)
= 3.0 V; I
O
= 15 mA; V
I
= 2.4 V.
(2) V
I(EN)
= 2.3 V; I
O
= 15 mA; V
I
= 1.7 V.
0.2
0.4
0.6
t
PD
(ns)
0
C (pF)
0
100
80
40
60
20
002aaf701
(1)
(2)
(3)
(4)
(5)
1
2
3
t
PD
(ns)
0
C (pF)
0
100
80
40
60
20
002aaf702
(1)
(2)
相关PDF资料 |
PDF描述 |
|---|---|
| NVT2008PW | Bidirectional voltage-level translator for open-drain and push-pull applications |
| NVT2010BQ | Bidirectional voltage-level translator for open-drain and push-pull applications |
| NVT2010BS | Bidirectional voltage-level translator for open-drain and push-pull applications |
| NVT2010PW | Bidirectional voltage-level translator for open-drain and push-pull applications |
| NX1117CE12Z | Low-dropout linear regulators |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NVT2008BQ,115 | 功能描述:转换 - 电压电平 +/-50mA 1.5ns 1-5.5V RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
| NVT2008PW,118 | 功能描述:转换 - 电压电平 +/-50mA 1.5ns 1-5.5V RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
| NVT2010 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Smart, simple solutions for the 12 most common design concerns |
| NVT2010BQ,118 | 功能描述:转换 - 电压电平 +/-50mA 1.5ns 1-5.5V RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
| NVT2010BS,115 | 功能描述:转换 - 电压电平 +/-50mA 1.5ns 1-5.5V RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
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