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| 型号： | NVTFS5826NLTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 20A 8WDFN |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 850pF @ 25V |
| 功率 - 最大： | 3.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WDFN（3.3x3.3） |
| 包装： | 带卷 (TR) |
NVTFS5826NL
Power MOSFET
60 V, 24 m W , 20 A, Single N ? Channel
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVTFS5826NLWF ? Wettable Flanks Product
? AEC ? Q101 Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
24 m W @ 10 V
32 m W @ 4.5 V
I D MAX
20 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
60
± 20
Unit
V
V
N ? Channel
D (5 ? 8)
Continuous Drain Cur-
rent R Y J ? mb (Notes 1,
2, 3, 4)
Power Dissipation
R Y J ? mb (Notes 1, 2, 3)
Steady
State
T mb = 25 ° C
T mb = 100 ° C
T mb = 25 ° C
T mb = 100 ° C
I D
P D
20
14
22
11
A
W
G (4)
S (1, 2, 3)
T A = 100 ° C
T A = 25 ° C
Continuous Drain Cur-
rent R q JA (Notes 1 &
3, 4)
Power Dissipation
R q JA (Notes 1, 3)
Pulsed Drain Current
T A = 25 ° C
Steady
State
T A = 100 ° C
T A = 25 ° C, t p = 10 m s
I D
P D
I DM
7.6
5.4
3.2
1.6
127
A
W
A
1
WDFN8
( m 8FL)
CASE 511AB
MARKING DIAGRAM
1
S D
S XXXX D
S AYWW G D
G G D
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
+175
18
° C
A
XXXX
A
Y
= Specific Device Code
= Assembly Location
= Year
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 24 V, V GS = 10 V,
I L(pk) = 20 A, L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
E AS
T L
20
260
mJ
° C
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Junction ? to ? Mounting Board (top) ? Steady
State (Note 2 and 3)
Junction ? to ? Ambient ? Steady State (Note 3)
Symbol
R Y J ? mb
R q JA
Value
6.8
47
Unit
° C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi ( Y ) is used as required per JESD51 ? 12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
? Semiconductor Components Industries, LLC, 2013
May, 2013 ? Rev. 2
1
Publication Order Number:
NVTFS5826NL/D
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相关代理商/技术参数 |
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| NVTFS5826NLTWG | 功能描述:MOSFET Single N-Channel 60V,20A,24mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVTFS5826NLWFTAG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 24 m, 20 A, Single Na??Channel |
| NVTFS5826NLWFTWG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 24 m, 20 A, Single Na??Channel |
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| NVTJD4001NT1G | 功能描述:MOSFET NFET 30V 250MA 1.5OH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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