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参数资料
| 型号： | NVTFS5826NLTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 20A 8WDFN |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 850pF @ 25V |
| 功率 - 最大： | 3.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WDFN（3.3x3.3） |
| 包装： | 带卷 (TR) |
NVTFS5826NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
0 _ 12 _ 0 _ 12 _
0.10 C
0.10 C
8X b
D
D1
8 7 6 5
1 2 3 4
TOP VIEW
SIDE VIEW
0.20 C
A
B 2X
E1 E
A
DETAIL A
c
0.20 C
6X
e
DETAIL A
4X
q
A1
C
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00 ??? 0.05 0.000 ??? 0.002
b 0.23 0.30 0.40 0.009 0.012 0.016
c 0.15 0.20 0.25 0.006 0.008 0.010
D 3.30 BSC 0.130 BSC
D1 2.95 3.05 3.15 0.116 0.120 0.124
D2 1.98 2.11 2.24 0.078 0.083 0.088
E 3.30 BSC 0.130 BSC
E1 2.95 3.05 3.15 0.116 0.120 0.124
E2 1.47 1.60 1.73 0.058 0.063 0.068
E3 0.23 0.30 0.40 0.009 0.012 0.016
e 0.65 BSC 0.026 BSC
G 0.30 0.41 0.51 0.012 0.016 0.020
K 0.65 0.80 0.95 0.026 0.032 0.037
L 0.30 0.43 0.56 0.012 0.017 0.022
L1 0.06 0.13 0.20 0.002 0.005 0.008
M 1.40 1.50 1.60 0.055 0.059 0.063
q ??? ???
0.10
0.05
C A B
C
4X L
1
4
e/2
K
SOLDERING FOOTPRINT*
8X
0.42 0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
E2
E3
M
G
8 5
D2
BOTTOM VIEW
L1
0.75
0.57
3.60
2.30
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVTFS5826NL/D
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