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参数资料
| 型号： | NX3008PBKS |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 200 mA dual P-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, SC-88, 6 PIN |
| 文件页数： | 5/17页 |
| 文件大小： | 894K |
| 代理商： | NX3008PBKS |
NX3008PBKS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
5 of 17
NXP Semiconductors
NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
Table 6.
Symbol
Per device
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
ambient
in free air
[1]
-
-
300
K/W
Per transistor
R
th(j-a)
thermal resistance from junction to
ambient
in free air
[1]
-
390
340
-
445
390
130
K/W
K/W
K/W
[2]
-
R
th(j-sp)
thermal resistance from junction to
solder point
-
FR4 PCB, standard footprint
Fig 4.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa034
t
p
(s)
10
3
10
2
10
3
10
1
10
2
10
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
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| NX3008PBKT | 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 200MA SOT416 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT416 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT416; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKT,115 | 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKV | 制造商:NXP Semiconductors 功能描述:MOSFETPP CH 30V 220MA SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666 制造商:NXP Semiconductors 功能描述:MOSFET,PP CH, 30V, 220MA, SOT666; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-220mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKV,115 | 功能描述:MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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