- 您现在的位置：买卖IC网 > PDF目录378681 > NX3008PBKV (NXP SEMICONDUCTORS) 30 V, 220 mA dual P-channel Trench MOSFET PDF资料下载
参数资料
| 型号： | NX3008PBKV |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 220 mA dual P-channel Trench MOSFET |
| 中文描述： | 220 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 1/17页 |
| 文件大小： | 865K |
| 代理商： | NX3008PBKV |
1.
Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
Static characteristics (per transistor)
R
DSon
drain-source on-state
resistance
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
ST6
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
-
-8
-
-
-
-30
8
-220
V
V
mA
V
GS
= -4.5 V; T
amb
= 25 °C
[1]
-
V
GS
= -4.5 V; I
D
= -200 mA;
T
j
= 25 °C
-
2.8
4.1
相关PDF资料 |
PDF描述 |
|---|---|
| NX3008PBKW | 30 V, 200 mA P-channel Trench MOSFET |
| NX3008PBK | 30 V, 230 mA P-channel Trench MOSFET |
| NX3L4357GM | Low-ohmic single-pole triple-throw analog switch with enable input |
| S07M-GS08 | Diode Small Signal Switching 1KV 1.5A 2-Pin DO-219AB T/R |
| S07G-GS08 | S07B, S07D, S07G, S07J, S07M Standard Recovery Rectifier High Voltage Surface Mount |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NX3008PBKV,115 | 功能描述:MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX3008PBKW | 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 200MA SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 200MA, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes |
| NX3008PBKW,115 | 功能描述:MOSFET 30V 200 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NX301 | 制造商:CANDD 制造商全称:C&D Technologies 功能描述:300 WATT AC/DC POWER SUPPLY |
| NX301001B | 制造商:Amphenol Aerospace 功能描述:PUSH-BUTTON SWITCH 制造商:Amphenol Nexus 功能描述:4 TO 1 KIT - Bulk |
发布紧急采购，3分钟左右您将得到回复。