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参数资料
| 型号： | NX3008PBKV |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 220 mA dual P-channel Trench MOSFET |
| 中文描述： | 220 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 7/17页 |
| 文件大小： | 865K |
| 代理商： | NX3008PBKV |
NX3008PBKV
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
7 of 17
NXP Semiconductors
NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
7.
Characteristics
Table 7.
Symbol
Static characteristics (per transistor)
V
(BR)DSS
drain-source breakdown
voltage
V
GSth
gate-source threshold
voltage
I
DSS
drain leakage current
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
I
D
= -250 μA; V
GS
= 0 V; T
j
= 25 °C
-30
-
-
V
I
D
= -250 μA; V
DS
= V
GS
; T
j
= 25 °C
-0.6
-0.9
-1.1
V
V
DS
= -30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= -30 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -2.5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -200 mA; T
j
= 25 °C
V
GS
= -4.5 V; I
D
= -200 mA; T
j
= 150 °C
V
GS
= -2.5 V; I
D
= -10 mA; T
j
= 25 °C
V
DS
= -10 V; I
D
= -200 mA; T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.2
-0.2
-10
-10
-1
-1
2.8
5.3
5.3
160
-1
-10
-1
-1
-
-
-
-
4.1
7.8
6.5
-
μA
μA
μA
μA
nA
nA
nA
nA
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
g
fs
Dynamic characteristics (per transistor)
Q
G(tot)
total gate charge
Q
GS
gate-source charge
Q
GD
gate-drain charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode (per transistor)
V
SD
source-drain voltage
forward transconductance
mS
V
DS
= -15 V; I
D
= -200 mA;
V
GS
= -4.5 V; T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
0.55
0.23
0.09
31
6.5
2.3
19
30
65
38
0.72
-
-
46
-
-
38
-
130
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
DS
= -15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
V
DS
= -20 V; R
L
= 250
; V
GS
= -4.5 V;
R
G(ext)
= 6
; T
j
= 25 °C
I
S
= -200 mA; V
GS
= 0 V; T
j
= 25 °C
-0.47
-0.88
-1.2
V
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