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参数资料
| 型号： | NX3008PBKV |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 220 mA dual P-channel Trench MOSFET |
| 中文描述： | 220 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 5/17页 |
| 文件大小： | 865K |
| 代理商： | NX3008PBKV |
NX3008PBKV
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 July 2011
5 of 17
NXP Semiconductors
NX3008PBKV
30 V, 220 mA dual P-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
Table 6.
Symbol
Per device
R
th(j-a)
Per transistor
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to ambient
in free air
[1]
-
-
250
K/W
thermal resistance from junction to ambient
in free air
[1]
-
330
280
-
380
320
115
K/W
K/W
K/W
[2]
-
R
th(j-sp)
thermal resistance from junction to solder point
-
FR4 PCB; standard footprint
Fig 4.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa064
t
p
(s)
10
3
10
2
10
3
10
1
10
2
10
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
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