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参数资料
| 型号： | NX3008PBKW |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 200 mA P-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, SC-70, 3 PIN |
| 文件页数： | 3/16页 |
| 文件大小： | 873K |
| 代理商： | NX3008PBKW |
NX3008PBKW
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
3 of 16
NXP Semiconductors
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
5.
Limiting values
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3]
Measured between all pins.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
j
= 25 °C
Min
-
-8
Max
-30
8
-200
-130
-0.8
260
310
830
150
150
150
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 μs
T
amb
= 25 °C
[1]
-
[1]
-
I
DM
P
tot
peak drain current
total power dissipation
-
[2]
-
[1]
-
T
sp
= 25 °C
-
-55
-55
-65
T
j
T
amb
T
stg
Source-drain diode
I
S
ESD maximum rating
V
ESD
junction temperature
ambient temperature
storage temperature
source current
T
amb
= 25 °C
[1]
-
-200
mA
electrostatic discharge voltage
HBM
[3]
-
2000
V
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