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参数资料
| 型号： | NX3008PBKW |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, 200 mA P-channel Trench MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 封装： | PLASTIC, SC-70, 3 PIN |
| 文件页数： | 5/16页 |
| 文件大小： | 873K |
| 代理商： | NX3008PBKW |
NX3008PBKW
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
5 of 16
NXP Semiconductors
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
in free air
Min
Typ
415
350
-
Max
480
400
150
Unit
K/W
K/W
K/W
[1]
-
[2]
-
R
th(j-sp)
thermal resistance from junction to solder point
-
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa028
t
p
(s)
10
3
10
2
10
3
10
1
10
2
10
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
017aaa029
t
p
(s)
10
3
10
2
10
3
10
1
10
2
10
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
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