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参数资料
| 型号： | NX3L4357GM |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 衰减器 |
| 英文描述： | Low-ohmic single-pole triple-throw analog switch with enable input |
| 中文描述： | RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH |
| 封装： | 2 X 1.55 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT1049-2, QFN-10 |
| 文件页数： | 13/21页 |
| 文件大小： | 179K |
| 代理商： | NX3L4357GM |
NX3L4357
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 28 December 2010
13 of 21
NXP Semiconductors
NX3L4357
Low-ohmic single-pole triple-throw analog switch with enable input
12.2 Additional dynamic characteristics
[1]
f
i
is biased at 0.5V
CC
.
Table 12.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f
2.5 ns.
Symbol Parameter
Conditions
Additional dynamic characteristics
T
amb
= 25
C
Min
Typ
Unit
Max
THD
total harmonic
distortion
f
i
= 20 Hz to 20 kHz; R
L
= 32
; see
Figure 17
V
CC
= 1.4 V; V
I
= 1 V (p-p)
V
CC
= 1.65 V; V
I
= 1.2 V (p-p)
V
CC
= 2.3 V; V
I
= 1.5 V (p-p)
V
CC
= 2.7 V; V
I
= 2 V (p-p)
V
CC
= 4.3 V; V
I
= 2 V (p-p)
V
CC
= 3.0 V; V
I
= 1 V (p-p); R
L
= 600
R
L
= 50
; see
Figure 18
port Y0, Y1 or Y2; V
CC
= 1.4 V to 4.3 V
port Y0, Y1 and Y2; V
CC
= 1.4 V to 4.3 V
f
i
= 100 kHz; R
L
= 50
; see
Figure 19
V
CC
= 1.4 V to 4.3 V
between digital inputs and switch;
f
i
= 1 MHz; C
L
= 50 pF; R
L
= 50
; see
Figure 20
V
CC
= 1.4 V to 3.6 V
V
CC
= 3.6 V to 4.3 V
between switches;
f
i
= 100 kHz; R
L
= 50
; see
Figure 21
V
CC
= 1.4 V to 4.3 V
f
i
= 1 MHz; C
L
= 0.1 nF; R
L
= 1 M
; V
gen
= 0 V;
R
gen
= 0
; see
Figure 22
V
CC
= 1.5 V
V
CC
= 1.8 V
V
CC
= 2.5 V
V
CC
= 3.3 V
V
CC
= 4.3 V
[1]
-
-
-
-
-
-
0.15
0.10
0.02
0.02
0.02
0.01
-
-
-
-
-
-
%
%
%
%
%
%
f
(
3dB)
3 dB frequency
response
[1]
-
-
30
20
-
-
MHz
MHz
iso
isolation (OFF-state)
[1]
-
90
-
dB
V
ct
crosstalk voltage
-
-
0.21
0.30
-
-
V
V
Xtalk
crosstalk
[1]
-
90
-
dB
Q
inj
charge injection
-
-
-
-
-
10
15
26
36
50
-
-
-
-
-
pC
pC
pC
pC
pC
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