参数资料
型号: NX3L4357GM
厂商: NXP SEMICONDUCTORS
元件分类: 衰减器
英文描述: Low-ohmic single-pole triple-throw analog switch with enable input
中文描述: RF/MICROWAVE SGL POLE TRIPLE THROW SWITCH
封装: 2 X 1.55 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT1049-2, QFN-10
文件页数: 6/21页
文件大小: 179K
代理商: NX3L4357GM
NX3L4357
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 28 December 2010
6 of 21
NXP Semiconductors
NX3L4357
Low-ohmic single-pole triple-throw analog switch with enable input
11.1 Test circuits
I
CC
additional
supply current
V
SW
= GND or V
CC
V
I
= 2.6 V; V
CC
= 4.3 V
V
I
= 2.6 V; V
CC
= 3.6 V
V
I
= 1.8 V; V
CC
= 4.3 V
V
I
= 1.8 V; V
CC
= 3.6 V
V
I
= 1.8 V; V
CC
= 2.5 V
-
-
-
-
-
-
2.0
0.35
7.0
2.5
50
1.0
4.0
0.7
10.0
4.0
200
-
-
-
-
-
-
-
7
1
7
1
A
A
A
A
nA
pF
15
5
300
-
15
5
500
-
C
I
input
capacitance
OFF-state
capacitance
ON-state
capacitance
C
S(OFF)
port Y0, Y1 and Y2
-
35
-
-
-
-
pF
C
S(ON)
port Z; broadcast mode
port Y0, Y1 and Y2
-
-
330
170
-
-
-
-
-
-
-
-
pF
pF
Table 7.
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
Conditions
Static characteristics
…continued
T
amb
= 25
C
Typ
T
amb
=
40
C to +125
C
Min
Max
(85
C)
Unit
Min
Max
Max
(125
C)
V
I
= 0.3 V or V
CC
0.3 V; V
O
= V
CC
0.3 V or 0.3 V.
Test circuit for measuring OFF-state leakage current
Fig 4.
I
S
001aak766
VI
GND
Sn
E
Z
V
IL
or V
IH
V
IH
V
CC
Yn
VO
V
I
= 0.3 V or V
CC
0.3 V; V
O
= V
CC
0.3 V or 0.3 V.
Test circuit for measuring ON-state leakage current
Fig 5.
I
S
001aak767
VO
GND
Sn
E
Z
V
IL
or V
IH
V
IL
V
CC
Yn
VI
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