参数资料
型号: NZ48F4L0QTY
厂商: Intel Corp.
英文描述: StrataFlash Wireless Memory
中文描述: 无线的StrataFlash存储器
文件页数: 2/106页
文件大小: 1272K
代理商: NZ48F4L0QTY
April 2005
2
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
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in nuclear facility applications.
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NZ48F4L0QTZ 制造商:INTEL 制造商全称:Intel Corporation 功能描述:StrataFlash Wireless Memory
NZ600N18K 制造商:n/a 功能描述:Power Module
NZ9F10VST5G 功能描述:稳压二极管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel
NZ9F10VT5G 功能描述:稳压二极管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel
NZ9F11VST5G 功能描述:稳压二极管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel