参数资料
| 型号： | NZQA6V8XV5T2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IC TVS ARRAY QUAD ESD SOT-553 |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 4,000 |
| 电压 - 反向隔离（标准值）： | 4.3V |
| 电压 - 击穿： | 6.46V |
| 功率（瓦特）： | 100W |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-553 |
| 供应商设备封装： | SOT-553 |
| 包装： | 带卷 (TR) |
NZQA5V6XV5T1G Series
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
Q V BR
I F
V F
Z ZT
I ZK
Z ZK
Maximum Temperature Coefficient of V BR
Forward Current
Forward Voltage @ I F
Maximum Zener Impedance @ I ZT
Reverse Current
Maximum Zener Impedance @ I ZK
I PP
Uni ? Directional
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Characteristic
Peak Power Dissipation (8 X 20 m s @ T A = 25 ° C) (Note 1)
Steady State Power ? 1 Diode (Note 2)
Thermal Resistance Junction to Ambient
Above 25 ° C, Derate
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
P PK
P D
R q JA
T Jmax
T J T stg
Value
100
300
370
2.7
150
? 55 to +150
Unit
W
mW
° C/W
mW/ ° C
° C
° C
ESD Discharge
MIL STD 883C ? Method 3015 ? 6
IEC1000 ? 4 ? 2, Air Discharge
V PP
16
16
kV
IEC1000 ? 4 ? 2, Contact Discharge
9
Lead Solder Temperature (10 seconds duration)
T L
260
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
Device
Breakdown Voltage
V BR @ 1 mA (Volts)
Leakage Current
I RM @ V RM
V C Max @ I PP
Typ Capacitance
@ 0 V Bias
(Note 3)
Max
V F @ I F =
200 mA
Device
NZQA5V6XV5T1G
NZQA6V2XV5T1G
NZQA6V8XV5T1G
Marking
56
62
68
Min
5.32
5.89
6.46
Nom
5.6
6.2
6.8
Max
5.88
6.51
7.14
V RWM
3.0
4.0
4.3
I RWM ( m A)
1.0
0.5
0.1
V C (V)
10.5
11.5
12.5
I PP (A)
10
9.0
8.0
(pF)
90
80
70
(V)
1.3
1.3
1.3
1. Non ? repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P D will be 25%. Mounted on FR ? 4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, V R = 0 V, T A = 25 ° C
http://onsemi.com
2
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