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| 型号： | OD-669 |
| 厂商： | Opto Diode Corp |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | EMITTER IR 500MW 9DIE 880NM TO66 |
| 标准包装： | 50 |
| 电流 - DC 正向(If)： | 400mA |
| 波长： | 880nm |
| 正向电压： | 13.5V |
| 视角： | 120° |
| 方向： | 顶视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-213AA，TO-66-2 |
| 包装： | 托盘 |
HIGH-POWER GaAlAs IRLED ILLUMINATOR
OD-669
LED CHIPS .140 R
.342 R
EPOXY
.426
.432
.053
.067
(REF. ONLY)
.084
.096
.030
.955
.965
. 350
MIN
. 325
.142
. 1 52
1.225
1.255
.480
FEATURES
? Highest power output available
? 880nm peak emission
? Nine chips connected in series
? Very wide angle of emission
? Electrically isolated case
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified.
CATHODE
ANODE
MAX
.170
DIMPLE
.680
.700
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P o
Peak Emission Wavelength, λ P
Spectral Bandwidth at 50%, ?λ
Half Intensity Beam Angle, θ
Forward Voltage, V F
Reverse Breakdown Voltage, V R
Capacitance, C
Rise Time
Fall Time
TEST CONDITIONS
I F = 300mA
I F = 5A
I F = 50mA
I F = 300mA
I R = 10 μ A
V R = 0V
MIN
390
5
TYP
500
6500
880
80
120
13.5
30
11
3
3
MAX
15
UNITS
mW
nm
nm
Deg
Volts
Volts
pF
μ sec
μ sec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation 1
Continuous Forward Current
Peak Forward Current (10 μ s, 400Hz) 2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1 Derate per Thermal Derating Curve above 25°C
2 Derate linearly above 25°C
6W
400mA
5A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range -55°C to 100°C
Maximum Junction Temperature 100°C
Thermal Resistance, R THJA 1 60°C/W Typical
Thermal Resistance, R THJA 2 16°C/W Typical
1 Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2 Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
相关PDF资料 |
PDF描述 |
|---|---|
| OD-850F | EMITTER IR 30MW 850NM |
| OD-850L | EMITTER IR 850NM TO-46 |
| OD-850W | EMITTER IR 850NM TO-46 |
| OD-880FHT | EMITTER IR 8MW 880NM NAR TO-46 |
| OD-880F | EMITTER IR 17MW 880NM NAR TO-46 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OD-669_13 | 制造商:OPTODIODE 制造商全称:OPTODIODE 功能描述:HIGH-POWER GaAlAs IRLED ILLUMINATOR |
| OD-669-850 | 制造商:OPTODIODE 制造商全称:OPTODIODE 功能描述:HIGH-POWER GaAlAs IRLED ILLUMINATOR |
| OD6-6-SO16 | 功能描述:光电二极管 6x1mm active area single axis PSD RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5 |
| OD6805 | 制造商:Ohmite Mfg Co 功能描述: |
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