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参数资料
| 型号： | OP223TXV |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | DIODE IR HERMETIC GAAIAS PILL |
| 产品培训模块： | LED Thermal Management |
| 标准包装： | 1 |
| 电流 - DC 正向(If)： | 100mA |
| 波长： | 890nm |
| 正向电压： | 1.8V |
| 视角： | 24° |
| 方向： | 顶视图 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 微型粒状 |
| 包装： | 散装 |
Hermetic Infrared Emitting Diode
OP123, OP124
OP223, OP224
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current (2μs pulse with 0.1% duty cycle)
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
-65 o C to +150 o C
-65 o C to +125 o C
2.0 V
100 mA
1.0 A
260° C (1)(2)
150 mW (3)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
Apertured Radiant Incidence
E E (APT)(3)
OP123
OP124
OP223
OP224
0.40
1.00
1.00
3.50
-
-
-
-
-
-
-
-
mW/cm 2 I F = 50 mA (4)
Forward Voltage
V F
I R
OP123
OP124
Reverse Current
-
-
-
-
-
-
1.50
1.80
100
V
μA
I F = 50 mA
V R = 2.0 V
Wavelength at Peak Emission
λ P
OP123, OP124
OP223, OP224
-
-
935
890
-
-
nm
I F = 50 mA
I F = 10 mA
Spectral Bandwidth between Half Power
B
Points OP123, OP124
OP223, OP224
-
-
50
80
-
-
nm
I F = 50 mA
I F = 10 mA
Spectral Shift with Temperature
?λ P / ? T
OP123, OP124
OP223, OP224
-
-
+0.30
+0.18
-
-
nm/°C
I F = Constant
θ HP
Emission Angle at Half Power Points
-
24
-
Degree I F = 50 mA
Output Rise Time
t r
t f
OP123, OP124
OP223, OP224
Output Fall Time
OP123, OP124
OP223, OP224
-
-
-
-
1000
500
500
250
-
-
-
-
ns
ns
I F(PK) =100 mA, PW=10 μs, and
D.C.=10.0%
Notes:
1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices.
2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
3. Derate linearly 1.50 mW/° C above 25° C.
4. For OP123, OP124, OP223 and OP224, E E(APT) is a measurement using a 0.031” (0.787 mm) diameter apertured sensor placed
0.50” (12.7 mm) from the measuring surface. E E(APT) is not necessarily uniform within the measured area.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A 05/07
Page 2 of 4
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OP224 | 功能描述:红外发射源 Hermetic 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP224K | 功能描述:红外发射源 H. Speed/Power Hrmtc Infrared Emit Diode RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP224S | 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP224TX | 功能描述:红外发射源 890NM 100mW 100mA RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP224TXV | 功能描述:红外发射源 890NM 100mW 100mA RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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