参数资料
| 型号： | OP27GZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP GP 8MHZ LN PREC 8DIP |
| 标准包装： | 48 |
| 放大器类型： | 通用 |
| 电路数： | 1 |
| 转换速率： | 2.8 V/µs |
| 增益带宽积： | 8MHz |
| 电流 - 输入偏压： | 15nA |
| 电压 - 输入偏移： | 30µV |
| 电压 - 电源，单路/双路(±)： | ±4 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 774 (CN2011-ZH PDF) |
OP27
Rev. F | Page 18 of 20
Capacitor C2 and Resistor R2 form a 2 μs time constant in this
circuit, as recommended for optimum transient response by the
transformer manufacturer. With C2 in use, A1 must have unity-
gain stability. For situations where the 2 μs time constant is not
necessary, C2 can be deleted, allowing the faster OP37 to be
employed.
A 150 Ω resistor and R1 and R2 gain resistors connected to a
noiseless amplifier generate 220 nV of noise in a 20 kHz
bandwidth, or 73 dB below a 1 mV reference level. Any practical
amplifier can only approach this noise level; it can never exceed
it. With the OP27 and T1 specified, the additional noise
degradation is close to 3.6 dB (or 69.5 referenced to 1 mV).
REFERENCES
1.
Lipshitz, S. R, “On RIAA Equalization Networks,” JAES,
Vol. 27, June 1979, p. 458–481.
2.
Jung, W. G., IC Op Amp Cookbook, 2nd. Ed., H. W. Sams
and Company, 1980.
3.
Jung, W. G., Audio IC Op Amp Applications, 2nd. Ed., H. W.
Sams and Company, 1978.
4.
Jung, W. G., and Marsh, R. M., “Picking Capacitors,” Audio,
February and March, 1980.
5.
Otala, M., “Feedback-Generated Phase Nonlinearity in
Audio Amplifiers,” London AES Convention, March 1980,
preprint 1976.
6.
Stout, D. F., and Kaufman, M., Handbook of Operational
Amplifier Circuit Design, New York, McGraw-Hill, 1976.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OP-27GZ | 制造商:AD 制造商全称:Analog Devices 功能描述:LOW NOISE, PRECISION OPERATIONAL AMPLIFIER |
| OP27NBC | 制造商:Analog Devices 功能描述: |
| OP27SAJ5/38510 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
| OP27SAZ5/38510 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
| OP280 | 功能描述:红外发射源 SMD RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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