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参数资料
| 型号： | OP501DA |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | PHOTODARLINGTON NPN BLK 0805 SMD |
| 标准包装： | 1 |
| 电压 - 集电极发射极击穿（最大）： | 35V |
| 电流 - 集电极 (Ic)（最大）： | 32mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 935nm |
| 视角： | 150° |
| 功率 - 最大： | 100mW |
| 安装类型： | 表面贴装 |
| 方向： | 顶视图 |
| 封装/外壳： | 0805（2012 公制） |
| 产品目录页面： | 2789 (CN2011-ZH PDF) |
| 其它名称： | 365-1480-1 |
Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (1)
Collector-Emitter Voltage
OP500, OP501
OP500DA, OP501DA
Emitter-Collector Voltage
Collector Current
OP500, OP501
OP500DA, OP501DA
Power Dissipation (2)
OP500, OP501
OP500DA, OP501DA
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
-40 o C to +100 o C
-25 o C to +85 o C
260° C
30 V
35 V
5V
20 mA
32 mA
75 mW
100 mW
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
I C(ON)
V CE(SAT)
I CEO
V BR(CEO)
On-State Collector Current
OP500, OP501
OP500DA, OP501DA
Collector-Emitter Saturation Voltage
OP500, OP501
OP500DA, OP501DA
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
OP500, OP501
OP500DA, OP501DA
0.1
10.0
-
-
-
30
35
-
-
-
-
-
-
-
-
0.3
1.0
100
-
mA
V
nA
V
V CE = 5.0 V, E E = 0.15 mW/cm 2 (3)
V CE = 5.0 V, E E = 0.15 mW/cm 2 (3)
I C = 100 μA, E E = 1.0 mW/cm 2 (3)
I C = 1 mA, E E = 0.15 mW/cm 2 (3)
V CC = 5.0 V (4)
I C = 100 μA, E E = 0
Emitter-Collector Breakdown Voltage
V BR(ECO)
OP500, OP501
OP500DA, OP501DA
5
5
-
-
-
-
V
I E = 100 μA, E E = 0
I C = 100 μA, E E = 0
Rise and Fall Times
t r, t f
OP500, OP501
OP500DA, OP501DA
-
15
50
-
60
μs
I C = 1 mA, R L = 1K ?
I C = 1 mA, R L = 1K ?
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 2.17 mW/° C above 25° C.
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less
than 10% over the entire lens surface of the phototransistor being tested.
4. To calculate typical collector dark current in μA, use the formulate I CEO = 10 (0.04 t - ?) , where T A is the ambient temperature in ° C.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A.4 02/09
Page 2 of 5
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
相关PDF资料 |
PDF描述 |
|---|---|
| OP505C | PHOTOTRANSISTOR SILICON NPN T-1 |
| OP505W | PHOTOTRANSMITTER SILICON NPN T-1 |
| OP506D | PHOTOTRANSMITTER SILICON NPN T-1 |
| OP506W | PHOTOTRANSMITTER SILICON NPN T-1 |
| OP508FC | PHOTOTRANS SILICON NPN FLAT LENS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP501SLA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 875NM PEAK WAVELENGTH | DOME-3.0 |
| OP501SLB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 875NM PEAK WAVELENGTH | DOME-3.0 |
| OP501SLC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 875NM PEAK WAVELENGTH | DOME-3.0 |
| OP501SLD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 875NM PEAK WAVELENGTH | DOME-3.0 |
| OP501SR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 930NM PEAK WAVELENGTH | LED-2B |
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