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| 型号： | OP599C |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRNS PLSTIC SILCN NPN T13/4 |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 50mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 890nm |
| 功率 - 最大： | 100mW |
| 安装类型： | 通孔 |
| 方向： | 顶视图 |
| 封装/外壳： | T 1 3/4 |
Product Bulletin OP599
June 1996
NPN Plastic Silicon Phototransistors
Type OP599 Series
Features
? Variety of sensitivity ranges
? T-1 3/4 package style
Description
The OP599 series phototransistor
consists of an NPN silicon
phototransistor mounted in a dark blue
plastic injection molded shell package.
The narrow receiving angle provides
excellent on-axis coupling. The sensors
are 100% production tested for close
correlation with Optek GaAlAs emitters.
Optek’s packaging process provides
excellent optical and mechanical axis
alignment. The shell also provides
excellent optical lens surface, control of
Absolute Maximum Ratings (T A = 25 o C unless otherwise noted)
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Continuous Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40 o C to +100 o C
Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 5 sec. with
soldering iron). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 o C (1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW (2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/ o C above 25 o C.
(3) V CE = 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission
wavelength of 890 nm and E e(APT) of .25 mW/cm 2 .
(4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in
the area of the leads.
Typical Performance Curves
Typical Spectral Response
chip placement, and consistency of the
outside package dimensions.
Wavelength - nm
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (972)323-2396
3-34
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