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参数资料
| 型号： | OP602TX |
| 厂商： | OPTEK TECHNOLOGY INC |
| 元件分类： | 光敏三极管 |
| 英文描述： | Hi- Reliability NPN Silicon Phototransistors |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | HERMETIC SEALED, PILL PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 175K |
| 代理商： | OP602TX |
Fea ures
Processed to Optek’s military
screening program patterned after
MIL-PRF-19500
Miniature hermetically sealed package
Wide range of collector currents
Ideal for direct mounting in PC boards
De scrip ion
Each device in this series consists of a
high reliability NPN silicon
phototransistor mounted in a miniature
glass lensed, hermetically sealed, “Pill”
package.
After electrical testing by manufacturing,
all devices are processed to Optek’s
100% screening program patterned after
MIL-PRF-19500. Typical screening and
lot acceptance tests are provided on
page 13-4.
This device type is lensed and has an
acceptance half angle of 18
o
measured
from the optical axis to the half power
point. The series is also mechanically
and spectrally matched to the OP223
and OP224 high reliability series of
infrared emitting diodes.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Stor age Tem pera ure Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Op er at ng Tem pera ure Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Collector- Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter- Collector Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 V
Sol der ng Tem pera ure (for 5 sec onds with sol der ng iron) . . . . . . . . . . . . . 240
o
C
(1)
Power Dis si pa ion. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mW
(2)
Notes:
(1) No-clean or low solids, RMA flux is recommended. Duration can be extended to 10 sec. max.
when wave soldering.
(2) Derate linearly 0.5 mW/
o
C above 25
o
C.
(3) Junction temperature maintained at 25
o
C.
(4) Light source is an unfiltered tungsten lamp operating at CT = 2870 K or equivalent source.
Prod uct Bul e in OP602TX/V
Sep em ber 1996
Hi- Reliability NPN Sili con Pho o ran sis ors
Types OP602TX/V, OP603TX/V, OP604TX/V, OP604S
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
13-30
相关PDF资料 |
PDF描述 |
|---|---|
| OP602V | Hi- Reliability NPN Silicon Phototransistors |
| OP603TX | Hi- Reliability NPN Silicon Phototransistors |
| OP603V | Hi- Reliability NPN Silicon Phototransistors |
| OP604TX | Hi- Reliability NPN Silicon Phototransistors |
| OP604V | Hi- Reliability NPN Silicon Phototransistors |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP602TXV | 功能描述:光电晶体管 Pill, NPN silicon Photo transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP602V | 制造商:OPTEK 制造商全称:OPTEK 功能描述:Hi- Reliability NPN Silicon Phototransistors |
| OP603 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:NPN SILICON PHOTOTRANSISTORS |
| OP603TX | 功能描述:光电晶体管 Pill NPN Silicon Photo RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP603TXV | 功能描述:光电晶体管 Pill, NPN silicon Photo transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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