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参数资料
| 型号： | OP755B |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRNS NPN W/RES SIDE LOOK |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 30mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 935nm |
| 功率 - 最大： | 200mW |
| 安装类型： | 通孔 |
| 方向： | 侧视图 |
| 封装/外壳： | 径向 |
Elec tri cal Char ac ter is tics (T A = 25 C un less oth er wise noted)
Types OP755A, OP755B, OP755C, OP755D
o
SYM BOL
PARAMETER
MIN
TYP MAX UNITS
TEST CON DI TIONS
On-State Collector Current
V CE = 5 V, E e = 1.0 mW/cm 2(3)
I C(ON)
OP755A
1.80
5.50
OP755B
OP755C
OP755D
1.20
0.70
0.70
3.40
2.25
5.50
mA
E KP
Knee Point Irradiance
.2
mW/cm 2 V CE = 5 V (4)
I CEO
I ECO
V (BR)CEO
V CE(SAT)
Collector-Emitter Dark Current
Emitter-Reverse Current
Collector-Emitter Breakdown
Collector-Emitter Saturation Voltage
30
100
100
0.4
nA
μ A
V
V
V CE = 10 V, E e = 0
V CE = 0.4 V
I C = 100 μ A
I C = 100 μ A, E e = 1 mW/cm 2(3)
Typi cal Per form ance Curves
Normalized Collector Current
vs. Angular Displacement
Normalzied Light and Dark
Current vs. Ambient Temperature
Light Current
100
10
1
.1
On-State Collector Current
vs. Irradiance
V CE = 5 V
OP555
.01
Dark Current
.00 1
OP755
.0001
θ - Angular Displacement - Deg.
Normalized Output
vs. Frequency
T A - Ambient Temperature - ° C
Typical Rise and Fall Time
vs. Load Resistance
.00001
.001
.01 .1 1
E e - Irradiance - mW/cm2
Switching Time
Test Circuit
10
1.0
120
0.5
V RL = 1 V
V CE = 5 V
50% Duty Cycle
LED: λ = 935 nm
105
90
75
60
45
V CC = 5 V
V RL = 1 V
f = 100 Hz
PW = 1mS
RL = 10K ?
RL =
30
15
LED = GaAIAs, λ = 890 nm
V RL is voltage across RL
Test Conditions:
0.0
1
10 100
Frequency - KHz
1000
0
0
2 4 6 8
R L = Load Resistance - K ?
10
Light source is pulsed LED with t r
and t f ≤ 500 ns.
IF is adjusted for V OUT = 1 Volt.
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
3-45
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OP755C | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP755D | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP760A | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP760B | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP760C | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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