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参数资料
| 型号： | OP775B |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRNS NPN W/CAP SIDE LOOK |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 3.4mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 935nm |
| 功率 - 最大： | 100mW |
| 安装类型： | 通孔 |
| 方向： | 侧视图 |
| 封装/外壳： | 径向 |
Elec tri cal Char ac ter is tics (T A = 25 C un less oth er wise noted)
Types OP775A, OP775B, OP775C, OP775D
o
SYM BOL
PARAMETER
On-State Collector Current
OP775D
MIN
0.70
TYP MAX UNITS
5.50
TEST CON DI TIONS
I C(ON)
OP775C
OP775B
0.70
1.20
2.25
3.40
mA
V CE = 5.0 V, E e = 1.0 mW/cm 2(3)
OP775A
1.80
5.50
? I C / ? T
I CEO
V (BR)ECO
V CE(SAT)
C CE
Relative I C Changes with Temperature
Collector Dark Current
Emitter-Collector Breakdown Voltage
Collector-Emitter Saturation Voltage
Capacitance
5.0
100
1000
100
0.40
%/ ° C
nA
V
V
pF
V CE = 5.0 V, E e = 1.0 mW/cm 2 ,
λ = 935 nm
V CE = 10.0 V, E e = 0
I E = 100 μ A
I C = 100 μ A, E e = 1.0 mW/cm 2(3)
V R = 0 V
Typi cal Per form ance Curves
Normalized Output
vs. Frequency
Typical Rise and Fall Time
vs. Load Resistance
LED = GaAIAs, λ = 890 nm
1.00
V RL = 1 V
V CE = 5 V
160
140 V RL is voltage across R L
.75
0.50
OP775
50% Duty Cycle
LED: λ = 935 nm
RL =
OP555
120
V CC = 5 V
100 V RL = 1 V
80 f = 100 Hz
6 0 PW = 1 mS
OP775
OP555
0.25
0.00
R L = 10 K ?
40
20
0
1
10
100
1000
0
2
4
6
8
10
Frequency - KHz
R L - Load Resistance - K ?
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
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| OP775C | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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