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参数资料
| 型号： | OP793A |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRANS NPN W/RESISTOR TO-18 |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 50mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 890nm |
| 功率 - 最大： | 250mW |
| 安装类型： | 通孔 |
| 方向： | 顶视图 |
| 封装/外壳： | TO-18-2 |
Prod uct Bul le tin OP793, OP798
Sep tem ber 1999
NPN Phototransistor with Base-Emitter Resistor
Types OP793, OP798 Series
OP793
OP798
NOTE: Dimensions not shown on OP798
are common with OP793.
Dimensions are in inches (millimeters).
Features
? Variety of sensitivity ranges
? TO-18 equivalent package style
? Base-emitter resistor provides ambient
light protection
Description
The OP793/OP798 series consists of
NPN silicon phototransistors molded in
dark blue epoxy packages. These
devices are 100% production tested
using infrared light for close correlation
with Optek’s GaAs and GaAlAs emitters.
The phototransistor has an internal base-
emitter resistor which provides protection
Ab so lute Maxi mum Rat ings (T A = 25 o C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Con tinu ous Col lec tor Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 o C to +100 o C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 o C (1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW (2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 3.33 mW/ o C above 25 o C.
(3) V CE = 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission
wavelength of 890 nm and E e(APT) of 1.7 mW/cm 2 average within a .250" dia. aperture.
(4) The knee point irradiance is defined as the irradiance required to increase I C(ON) to 50 μ A.
Typi cal Per form ance Curves
from low level ambient lighting
conditions. This feature is also useful
Typi cal Spec tral Re sponse
Schematic
when the media being detected is semi-
transparent to infrared light in interruptive
applications.
Wave length - nm
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
(972) 323- 2200
Fax (972) 323- 2396
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OP793B | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP793C | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP793D | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP798 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:NPN Pho to tran sis tor with Base- Emitter Resistor |
| OP798A | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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