参数资料
型号: OP800A
厂商: TT Electronics/Optek Technology
文件页数: 1/3页
文件大小: 0K
描述: PHOTOTRANS SILICON NPN HERM TO18
标准包装: 1
系列: *
电压 - 集电极发射极击穿(最大): 30V
电流 - 集电极 (Ic)(最大): 50mA
电流 - 暗 (Id)(最大): 100nA
波长: 890nm
功率 - 最大: 250mW
安装类型: 通孔
方向: 顶视图
封装/外壳: TO-206AA,TO-18-3 金属罐
NPN Silicon Phototransistor
OP800A, OP800B, OP800C, OP800D
Features:
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Narrow receiving angle
Suitable for applications from 400nm to 1100
Variety of sensitivity ranges
TO-18 hermetically sealed package
Enhanced temperature range
Base lead connection
Description:
The OP800 Series device consist of a NPN silicon phototransistor mounted in a hermetically
sealed package. The narrow receiving angle provides excellent on-axis coupling. TO-18 package offer high
power dissipation and hostile environment operation. The base lead is bonded to enable conventional transistor
biasing.
Applications:
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Industrial and commercial electronics
Distance sensing
Harsh environment
Photointerrupters
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 9/2010
Page 1 of 3
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相关代理商/技术参数
参数描述
OP800B 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP800C 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP800D 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP800SL 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
OP800WSL 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1