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参数资料
| 型号： | P45N02 |
| 厂商： | Intersil Corporation |
| 英文描述： | 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs |
| 中文描述： | 45A条，20V的，0.022 Ohm的N通道功率MOSFET的逻辑电平 |
| 文件页数： | 1/8页 |
| 文件大小： | 78K |
| 代理商： | P45N02 |
1
RFP45N02L,
RF1S45N02L, RF1S45N02LSM
45A, 20V, 0.022 Ohm, N-Channel
Logic Level Power MOSFETs
May 1997
Features
45A, 20V
r
DS(ON)
= 0.022
Temperature CompensatingPSPICE Model
Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are
N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
Formerly developmental type TA49243.
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N02L
TO-220AB
FP45N02L
RF1S45N02L
TO-262AA
F45N02L
RF1S45N02LSM
TO-263AB
F45N02L
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S45N02LSM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
File Number
4342
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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