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参数资料
| 型号： | P45N02 |
| 厂商： | Intersil Corporation |
| 英文描述： | 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs |
| 中文描述： | 45A条，20V的，0.022 Ohm的N通道功率MOSFET的逻辑电平 |
| 文件页数： | 4/8页 |
| 文件大小： | 78K |
| 代理商： | P45N02 |
4
RFP45N02L, RF1S45N02L, RF1S45N02LSM
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0.01
0.1
10
10
0.001
200
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
1
100
0
25
0
1
2
3
5
50
75
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 10V
100
4
V
GS
= 3V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 250
μ
s, T
C
= 25
o
C
0
3.0
4.5
6.0
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
25
50
75
175
o
C
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
100
-55
o
C
25
o
C
V
DD
= 15V
0
25
50
75
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4.0
4.5
r
D
,
5.0
100
I
D
= 2A
I
D
= 30A
I
D
= 15A
I
D
= 45A
2.5
PULSE DURATION = 250
μ
s
O
)
0
150
200
250
300
0
10
20
30
40
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
350
100
50
t
r
t
f
t
d(OFF)
t
d(ON)
V
DD
= 15V, I
D
= 45A, R
L
= 0.333
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
PULSE DURATION = 250
μ
s, V
GS
= 5V, I
D
= 45A
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