参数资料
型号: P4C168L-35FMB
厂商: PYRAMID SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 4K X 4 STANDARD SRAM, 35 ns, CDFP20
封装: CERAMIC, PACKAGE-20
文件页数: 7/14页
文件大小: 628K
代理商: P4C168L-35FMB
P4C168/P4C168L, P4C169, P4C170
Page 2 of 14
Document # SRAM107 REV E
RECOMMENDED OPERATING CONDITIONS
CAPACITANCES(2)
(V
CC = 5.0V, TA = 25°C, f = 1.0MHz)
DC ELECTRICAL CHARACTERISTICS
MAxIMUM RATINGS(1)
Grade(2)
Ambient Temp
Gnd V
CC
Commercial 0°C to 70°C
0V
5.0V ± 10%
Military
-55°C to +125°C 0V
5.0V ± 10%
Symbol Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
-0.5 to +7
V
TERM
Terminal Voltage with
respect to GND (up to
7.0V)
-0.5 to V
CC
+ 0.5
V
T
A
Operating Temperature -55 to +125
°C
Symbol Parameter
Value
Unit
T
BIAS
Temperature Under
Bias
-55 to +125 °C
T
STG
Storage Temperature -65 to +150 °C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
Sym Parameter
Conditions Typ. Unit
C
IN
Input Capacitance
V
IN=0V
5
pF
C
OUT
Output Capacitance V
OUT=0V
7
pF
Sym Parameter
Test Conditions
P4C168/169/170
P4C168L
Unit
Min
Max
Min
Max
V
IH
Input High Voltage
2.2
V
CC+0.5
2.2
V
CC+0.5
V
IL
Input Low Voltage
-0.5(3)
0.8
-0.5(3)
0.8
V
OL
Output Low Voltage (TTL Load)
I
OL=+8 mA, VCC=Min
0.4
V
OH
Output High Voltage (TTL Load)
I
OH=-4 mA, VCC=Min
2.4
V
I
LI
Input Leakage Current (Military)
V
CC=Max, VIN=GND to VCC
-10
+10
-5
+5
A
Input Leakage Current (Commercial)
-5
+5
-2
+2
I
LO
Output Leakage Current (Military)
V
CC=Max, CS=VIH, VOUT=GND to
V
CC
-10
+10
-5
+5
A
Output Leakage Current (Commer-
cial)
-5
+5
-2
+2
I
CC
Dynamic Operating Current (Military)
V
CC=Max,f=Max, Outputs Open
120
120
mA
Dynamic Operating Current (Com-
mercial)
100
100
I
SB
Standby Power Supply Current (TTL
Input Levels) (Military)
CE
1≥VIH,VCC=Max,f=Max,Outputs
Open
40
40
mA
Standby Power Supply Current (TTL
Input Levels) (Commercial)
35
35
I
SB1
Standby Power Supply Current
(CMOS Input Levels) (Military)
CE
1≥VHC,VCC=Max,f=0,Outputs
Open,V
IN≤VLC or VIN≥VHC
20
1
mA
Standby Power Supply Current
(CMOS Input Levels) (Commercial)
15
0.2
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability..
2. This parameter is sampled and not 100% tested.
3. Transient inputs with V
IL and IIL not more negative than -3.0V and -100mA,
respectively, are permissible for pulse widths up to 20 ns.
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