参数资料
型号: P6KE12C-E3/4
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
封装: ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN
文件页数: 4/7页
文件大小: 98K
代理商: P6KE12C-E3/4
www.vishay.com
4
Document Number 88369
20-Jun-06
Vishay General Semiconductor
P6KE6.8 thru P6KE540A
Note:
(+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bidirectional types with VWM of 10 volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(+)P6KE440
396
484
1.0
356
1.0
0.95
631
0.110
(+)P6KE440A
418
462
1.0
376
1.0
1.00
602
0.110
P6KE480
432
528
1.0
389
1.0
0.88
686
0.110
P6KE480A
456
504
1.0
408
1.0
0.91
658
0.110
P6KE510
459
561
1.0
413
1.0
0.82
729
0.110
P6KE510A
485
535
1.0
434
1.0
0.86
698
0.110
P6KE540
486
594
1.0
437
1.0
0.78
772
0.110
P6KE540A
513
567
1.0
459
1.0
0.81
740
0.110
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN
VOLTAGE
V(BR) AT IT
(1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
(3) I
D
(A)
PEAK
PULSE
CURRENT
IPPM
(2) (A)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V(BR) (%/°C)
MIN
MAX
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance junction-to-lead
RθJL
20
°C/W
Typical thermal resistance junction-to-ambient
RθJA
75
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
P6KE6.8A-E3/54
0.432
54
4000
13" Diameter Paper Tape & Reel
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