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参数资料
| 型号： | P6KE12C-E3/4 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 98K |
| 代理商： | P6KE12C-E3/4 |
Vishay General Semiconductor
P6KE6.8 thru P6KE540A
Document Number 88369
20-Jun-06
www.vishay.com
5
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
Figure 3. Pulse Waveform
td - Pulse Width (sec.)
0.1
1
10
100
1.0 ms
10 ms
0.1 s
1.0 s
10 s
100 s
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
P
PPM
,P
e
ak
P
u
lse
P
o
w
er
(k
W
)
100
75
50
25
0
25
50
75
100
125
150
175
200
P
eak
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
ercentage
,
%
TJ - Initial Temperature (°C)
100
50
0
1.0
2.0
3.0
4.0
150
tr = 10 sec.
Peak Value
IPPM
10/1000 sec. Waveform
as defined by R.E.A.
TJ = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
Half Value -
IPPM
IPP
2
td
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
Figure 4. Typical Junction Capacitance Uni-Directional
Figure 5. Power Derating Curve
Figure 6. Maximum Non-Repetitive Forward Surge Current
10
100
1000
6000
10
100
200
1.0
C
J,
J
u
nction
Capacitance
(pF)
V(BR) - Breakdown Voltage (V)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
Measured at Stand-off
Voltage VWM
6
5
4
3
2
1
0
25
50
75
100
125
150
175
200
L = 0.375" (9.5 mm)
Lead Lengths
P
D
,P
o
w
er
Dissipation
(
W
)
TL - Lead Temperature (°C)
60 Hz
Resistive or
Inductive Load
200
100
50
10
1
5
10
50
100
IFSM
-
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A
)
Number of Cycles at 60 Hz
Uni-Directional Only
TJ = TJ max.
8.3 ms Single Half Sine-Wave
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相关代理商/技术参数 |
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|---|---|
| P6KE12C-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:600W Transient Voltage Suppressor |
| P6KE12CHE3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6KE12CHE3/73 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6KE12C-LF | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:600W TRANSIENT VOLTAGE SUPPRESSOR |
| P6KE12C-RH | 制造商:PRIVATE LABEL 功能描述:TVS DIODE, 600W, 12V, DO-15, TVS Polarity:Bidirectional, Reverse Stand-Off Volta |
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