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参数资料
| 型号： | P6SMBJ15CATRF |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 3/5页 |
| 文件大小： | 91K |
| 代理商： | P6SMBJ15CATRF |
World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: (707) 996-5201 . . Fax: (707) 996-3380
TVS Diodes - Surface Mount - 600 Watt Specifications - P6SMBJ Series Electrical Characteristics
- (Continued)
Part
Number*
Uni
Part
Marking
Bi
Part
Marking
Rated
Standoff
Voltage
Vwm
Breakdown Voltage Maximum
Stand By
Current
@Vwm+
Id
10/1000s
Maximum
Clamping
Voltage
@Ippm#
Vc Max
10/1000s
Rated Peak
Impulse
Current
Ippm#
Vbr
Min
@It
(Volts)
(mA)
(A)
(Volts)
(Amperes)
P6SMBJ43
MS
CS
43.0
47.80
1
5.0
76.7
7.8
P6SMBJ43A
MT
CT
43.0
47.80
1
5.0
69.4
8.6
P6SMBJ45
MU
CU
45.0
50.00
1
5.0
80.3
7.5
P6SMBJ45A
MV
CV
45.0
50.00
1
5.0
72.7
8.3
P6SMBJ48
MW
CW
48.0
53.30
1
5.0
85.5
7.0
P6SMBJ48A MX
CX
48.0
53.30
1
5.0
77.4
7.7
P6SMBJ51
MY
CY
51.0
56.70
1
5.0
91.1
6.6
P6SMBJ51A
MZ
CZ
51.0
56.70
1
5.0
82.4
7.3
P6SMBJ54
ND
DD
54.0
60.00
1
5.0
96.3
6.2
P6SMBJ54A
NE
DE
54.0
60.00
1
5.0
87.1
6.9
P6SMBJ58
NF
DF
58.0
64.40
1
5.0
103.0
5.8
P6SMBJ58A
NG
DG
58.0
64.40
1
5.0
93.6
6.4
P6SMBJ60
NH
DH
60.0
66.70
1
5.0
107.0
5.6
P6SMBJ60A
NK
DK
60.0
66.70
1
5.0
96.8
6.2
P6SMBJ64
NL
DL
64.0
71.10
1
5.0
114.0
5.3
P6SMBJ64A NM
DM
64.0
71.10
1
5.0
103.0
5.8
P6SMBJ70
NN
DN
70.0
77.80
1
5.0
125.0
4.8
P6SMBJ70A
NP
DP
70.0
77.80
1
5.0
113.0
5.3
P6SMBJ75
NQ
DQ
75.0
83.30
1
5.0
134.0
4.5
P6SMBJ75A
NR
DR
75.0
83.30
1
5.0
121.0
4.9
P6SMBJ78
NS
DS
78.0
86.70
1
5.0
139.0
4.3
P6SMBJ78A
NT
DT
78.0
86.70
1
5.0
126.0
4.7
P6SMBJ85
NU
DU
85.0
94.40
1
5.0
151.0
3.9
P6SMBJ85A
NV
DV
85.0
94.40
1
5.0
137.0
4.4
P6SMBJ90
NW
DW
90.0
100.00
1
5.0
160.0
3.8
P6SMBJ90A
NX
DX
90.0
100.00
1
5.0
146.0
4.1
* = Add "C" or "CA" suffix for bidirectional device types.
+ = For Bidirectional Types Having Vwm <= 10V, their Id limit is doubled.
# = See General Information for Impulse Current Waveform.
相关PDF资料 |
PDF描述 |
|---|---|
| P6SMBJ170CTRF | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ110C | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ150 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ40 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ43A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| P6SMBJ16 | 功能描述:TVS 二极管 - 瞬态电压抑制器 12.9Vso 14.4Vbr 26A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ160 | 功能描述:TVS 二极管 - 瞬态电压抑制器 130Vso 144Vbr 2.6A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ160A | 功能描述:TVS 二极管 - 瞬态电压抑制器 136Vso 152Vbr 2.7A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ160A-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
| P6SMBJ160C | 功能描述:TVS 二极管 - 瞬态电压抑制器 130Vso 144Vbr 2.6A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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