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参数资料
| 型号： | P6SMBJ15CATRF |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 4/5页 |
| 文件大小： | 91K |
| 代理商： | P6SMBJ15CATRF |
World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: (707) 996-5201 . . Fax: (707) 996-3380
TVS Diodes - Surface Mount - 600 Watt Specifications - P6SMBJ Series Electrical Characteristics
- (Continued)
Part
Number*
Uni
Part
Marking
Bi
Part
Marking
Rated
Standoff
Voltage
Vwm
Breakdown Voltage Maximum
Stand By
Current
@Vwm+
Id
10/1000s
Maximum
Clamping
Voltage
@Ippm#
Vc Max
10/1000s
Rated Peak
Impulse
Current
Ippm#
Vbr
Min
@It
(Volts)
(mA)
(A)
(Volts)
(Amperes)
P6SMBJ100
NY
DY
100.0
111.00
1
5.0
179.0
3.4
P6SMBJ100A
NZ
DZ
100.0
111.00
1
5.0
162.0
3.7
P6SMBJ110
PD
ED
110.0
122.00
1
5.0
196.0
3.0
P6SMBJ110A
PE
EE
110.0
122.00
1
5.0
177.0
3.4
P6SMBJ120
PF
EF
120.0
133.00
1
5.0
214.0
2.8
P6SMBJ120A
PG
EG
120.0
133.00
1
5.0
193.0
3.1
P6SMBJ130
PH
EH
130.0
144.00
1
5.0
231.0
2.6
P6SMBJ130A
PK
EK
130.0
144.00
1
5.0
209.0
2.9
P6SMBJ150
PL
EL
150.0
167.00
1
5.0
268.0
2.2
P6SMBJ150A
PM
EM
150.0
167.00
1
5.0
243.0
2.5
P6SMBJ160
PN
EN
160.0
178.00
1
5.0
287.0
2.1
P6SMBJ160A
PP
EP
160.0
178.00
1
5.0
259.0
2.3
P6SMBJ170
PQ
EQ
170.0
189.00
1
5.0
304.0
2.0
P6SMBJ170A
PR
ER
170.0
189.00
1
5.0
275.0
2.2
* = Add "C" or "CA" suffix for bidirectional device types.
+ = For Bidirectional Types Having Vwm <= 10V, their Id limit is doubled.
# = See General Information for Impulse Current Waveform.
相关PDF资料 |
PDF描述 |
|---|---|
| P6SMBJ170CTRF | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ110C | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ150 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ40 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P6SMBJ43A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| P6SMBJ16 | 功能描述:TVS 二极管 - 瞬态电压抑制器 12.9Vso 14.4Vbr 26A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ160 | 功能描述:TVS 二极管 - 瞬态电压抑制器 130Vso 144Vbr 2.6A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ160A | 功能描述:TVS 二极管 - 瞬态电压抑制器 136Vso 152Vbr 2.7A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ160A-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
| P6SMBJ160C | 功能描述:TVS 二极管 - 瞬态电压抑制器 130Vso 144Vbr 2.6A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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