参数资料
型号: P6SMBJ180-T/R
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装: ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件页数: 1/5页
文件大小: 140K
代理商: P6SMBJ180-T/R
PAGE . 1
STAD-APR.07.2009
1
P6SMBJ SERIES
FEATURES
For surface mounted applications in order to optimize board space.
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Typical I
D less than 1.0A above 10V
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
High temperature soldering : 260°C /10 seconds at terminals
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: JEDEC DO-214AA,Molded plastic over passivated junction.
Terminals: Solder plated,solderable per MIL-STD-750,Method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging:12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 OC per Fig. 2.
2. Mounted on 5.0mm2 (0.13mm thick) land areas.
3. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
MAXIMUM RATINGSAND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
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Recongnized File # E210467
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts
STAND-OFF VOLTAGE
5.0 to 220 Volts
DEVICES FOR BIPOLARAPPLICATIONS
For Bidirectional use C or CA Suffix for types P6SMBJ5.0 thru types P6SMBJ220.
Electrical characteristics apply in both directions.
相关PDF资料
PDF描述
P6SMBJ13C 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
P6SMBJ18A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
P6SMBJ220CA 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
P6SMBJ33C-T/R 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
P6SMBJ6.0A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
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P6SMBJ18A 功能描述:TVS 二极管 - 瞬态电压抑制器 15.3Vso 17.1Vbr 24A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
P6SMBJ18C 功能描述:TVS 二极管 - 瞬态电压抑制器 14.5Vso 16.2Vbr 23A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
P6SMBJ18CA 功能描述:TVS 二极管 - 瞬态电压抑制器 15.3Vso 17.1Vbr 24A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
P6SMBJ20 功能描述:TVS 二极管 - 瞬态电压抑制器 16.2Vso 18Vbr 21A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
P6SMBJ200 功能描述:TVS 二极管 - 瞬态电压抑制器 162Vso 180Vbr 2.1A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C