- 您现在的位置：买卖IC网 > PDF目录299586 > P6SMBJ550A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA PDF资料下载
参数资料
| 型号： | P6SMBJ550A |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC SMBJ, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 502K |
| 代理商： | P6SMBJ550A |
Silicon Avalanche Diodes
266
www .littelfuse .com
P6SMBJ Series
600W Surface Mount Transient Voltage Supressors
Agency Approvals: Recognized under the Components Program
of Underwriters Laboratories.
Agency File Number: E128662
ORDERING INFORMATION
P6SMBJ
C A
Voltage
Bi-Directional
5% Voltage Tolerance
Tape and reeled (3000 pcs)
FEATURES
RoHS compliant
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Low lead inductance
Excellent clamping capability
Repetition Rate (duty cycle): 0.01%
Fast response time: typically less than 1.0ps from 0 Volts to
BV for unidirectional types
Typical IR less than 1 mA above 10V
High Temperature soldering: 250C/10 seconds at terminals
MAXIMUM RATINGS AND CHARACTERISTICS
@25C AMBIENT TEMPERATURE (unless otherwise noted)
PARAMETER
Peak pulse power Dissipation on
10/1000s waveform
(note 1,2, FIG.1)
Peak pulse current of on 10\1000s
waveform (note 1, FIG.3)
Peak forward Surge Current, 8.3ms
Single Half SIne Wave Superimposed
on Rated Load, (JEDEC Method)
(note 2.3)
Operating junction and Storage
Temperature Range
VALUE
Min
600
SEE TABLE 1
100
-55 to +150
UNIT
Watts
Amps
°C
Note 1. Non-repetitive current pulse, per Fig.3 and derated above
TA= 25C per Fig.2
Note 2. Mounted on 5.0mm2(0.03mm thick) Copper Pads to each
terminal
Note 3. 8.3 ms single half sine-wave, or equivalent square wave,
Duty cycle= 4 pulses per minute
SYMBOL
PPPM
IPPM
IPSM
Tj, TsTG
RoHS
Mechanical Specifications:
Weight:
0.003ounce, 0.093 gram
Case:
JEDEC DO-214AA Molded Plastic over
glass passivated junction
Mounting Position:
Any
Polarity:
Color band denotes cathode except
Bidirectional
Terminal:
Solder Plated solderable per
MIL-STD-750, Method 2026
Standard Packaging:
12mm tape (EIA STF RS-481)
OBSOLETE
相关PDF资料 |
PDF描述 |
|---|---|
| P6SMBJ8.2A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| P74FCT138ATD | FCT SERIES, OTHER DECODER/DRIVER, INVERTED OUTPUT, CDIP16 |
| P74FCT139CTD | FCT SERIES, OTHER DECODER/DRIVER, INVERTED OUTPUT, CDIP16 |
| P74FCT139TL | FCT SERIES, OTHER DECODER/DRIVER, INVERTED OUTPUT, CQCC20 |
| P80C52X2BN | 8-BIT, MROM, 33 MHz, MICROCONTROLLER, PDIP40 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| P6SMBJ550C | 功能描述:TVS 二极管 - 瞬态电压抑制器 495Vso 522.5Vbr RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ550CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 495Vso 522.5Vbr RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ56 | 功能描述:TVS 二极管 - 瞬态电压抑制器 45.4Vso 50.4Vbr 7.4A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ56A | 功能描述:TVS 二极管 - 瞬态电压抑制器 47.8Vso 53.2Vbr 7.8A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ56C | 功能描述:TVS 二极管 - 瞬态电压抑制器 47.8Vso 53.2Vbr RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。