参数资料
型号: P89LPC985FDH,529
厂商: NXP Semiconductors
文件页数: 65/85页
文件大小: 0K
描述: IC 80C51 MCU KB FLASH 28TSSOP
标准包装: 51
系列: LPC900
核心处理器: 8051
芯体尺寸: 8-位
速度: 18MHz
连通性: I²C,SPI,UART/USART
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 26
程序存储器容量: 8KB(8K x 8)
程序存储器类型: 闪存
RAM 容量: 512 x 8
电压 - 电源 (Vcc/Vdd): 2.4 V ~ 5.5 V
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 28-TSSOP(0.173",4.40mm 宽)
包装: 管件
P89LPC980_982_983_985
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 15 June 2010
68 of 85
NXP Semiconductors
P89LPC980/982/983/985
8-bit microcontroller with accelerated two-clock 80C51 core
[1]
Typical ratings are not guaranteed. The values listed are at room temperature, 3 V.
[2]
The IDD(oper) and IDD(idle) specifications are measured using an external clock with the following functions disabled: comparators,
real-time clock, and watchdog timer.
[3]
The IDD(pd) and IDD(tpd) specification is measured using an external clock with the following functions disabled: comparators, real-time
clock, brownout detect, and watchdog timer.
[4]
See Section 9 “Limiting values” for steady state (non-transient) limits on IOL or IOH. If IOL/IOH exceeds the test condition, VOL/VOH may
exceed the related specification.
[5]
This specification can be applied to pins which have A/D input or analog comparator input functions when the pin is not being used for
those analog functions. When the pin is being used as an analog input pin, the maximum voltage on the pin must be limited to 4.0 V with
respect to VSS.
[6]
Pin capacitance is characterized but not tested.
[7]
Measured with port in quasi-bidirectional mode.
[8]
Measured with port in high-impedance mode.
[9]
Port pins source a transition current when used in quasi-bidirectional mode and externally driven from logic 1 to logic 0. This current is
highest when VI is approximately 2 V.
BOD reset
Vtrip
trip voltage
falling stage
BOE2, BOE1, BOE0 = 010
2.15
-
2.35
V
BOE2, BOE1, BOE0 = 011
2.45
-
2.65
V
BOE2, BOE1, BOE0 = 100
2.75
-
2.95
V
BOE2, BOE1, BOE0 = 101
3.05
-
3.25
V
BOE2, BOE1, BOE0 = 110
3.75
-
3.95
V
BOE2, BOE1, BOE0 = 111
3.95
-
4.15
V
rising stage
BOE2, BOE1, BOE0 = 010
2.30
-
2.50
V
BOE2, BOE1, BOE0 = 011
2.60
-
2.80
V
BOE2, BOE1, BOE0 = 100
2.90
-
3.10
V
BOE2, BOE1, BOE0 = 101
3.20
-
3.40
V
BOE2, BOE1, BOE0 = 110
3.85
-
4.05
V
BOE2, BOE1, BOE0 = 111
4.05
-
4.25
V
BOD flash
Vtrip
trip voltage
falling stage
2.30
-
2.55
V
rising stage
2.40
-
2.65
V
Vref(bg)
band gap reference
voltage
1.19
1.23
1.27
V
TCbg
band gap
temperature
coefficient
-
10
20
ppm/
°C
Table 13.
Static characteristics …continued
VDD = 2.4 V to 5.5 V unless otherwise specified.
Tamb = 40 °Cto+85 °C for industrial applications, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
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