参数资料
型号: PA28F200CV-T60
厂商: Intel Corp.
英文描述: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 2兆位SmartVoltage启动块闪存系列
文件页数: 16/48页
文件大小: 562K
代理商: PA28F200CV-T60
28F200BX-T/B, 28F002BX-T/B
Table 1. Bus Operations for WORD-WIDE Mode (BYTE
Y
e
V
IH
)
Mode
Notes
RP
Y
CE
Y
OE
Y
WE
Y
A
9
A
0
V
PP
DQ
0–15
Read
1, 2
V
IH
V
IL
V
IL
V
IH
X
X
X
D
OUT
Output Disable
V
IH
V
IL
V
IH
V
IH
X
X
X
High Z
Standby
V
IH
V
IH
X
X
X
X
X
High Z
Deep Power-Down
9
V
IL
X
X
X
X
X
X
High Z
Intelligent Identifier (Mfr)
3, 4
V
IH
V
IL
V
IL
V
IH
V
ID
V
IL
X
0089H
Intelligent Identifier (Device)
3, 4, 5
V
IH
V
IL
V
IL
V
IH
V
ID
V
IH
X
2274H
2275H
Write
6, 7, 8
V
IH
V
IL
V
IH
V
IL
X
X
X
D
IN
Table 2. Bus Operations for BYTE-WIDE Mode (BYTE
Y
e
V
IL
)
Mode
Notes
RP
Y
CE
Y
OE
Y
WE
Y
A
9
A
0
A
b
1
V
PP
DQ
0–7
DQ
8–14
Read
1, 2, 3
V
IH
V
IL
V
IL
V
IH
X
X
X
X
D
OUT
High Z
Output Disable
V
IH
V
IL
V
IH
V
IH
X
X
X
X
High Z
High Z
Standby
V
IH
V
IH
X
X
X
X
X
X
High Z
High Z
Deep Power-Down
9
V
IL
X
X
X
X
X
X
X
High Z
High Z
Intelligent Identifier (Mfr)
4
V
IH
V
IL
V
IL
V
IH
V
ID
V
IL
X
X
89H
High Z
Intelligent Identifier
(Device)
4, 5
V
IH
V
IL
V
IL
V
IH
V
ID
V
IH
X
X
74H
75H
High Z
Write
6, 7, 8
V
IH
V
IL
V
IH
V
IL
X
X
X
X
D
IN
High Z
NOTES:
1. Refer to DC Characteristics.
2. X can be V
IL
or V
IH
for control pins and addresses, V
PPL
or V
PPH
for V
PP
.
3. See DC characteristics for V
PPL
, V
PPH
, V
HH
, V
ID
voltages.
4. Manufacturer and Device codes may also be accessed via a CUI write sequence. A
1
–A
17
e
X.
5. Device ID
e
2274H for 28F200BX-T and 2275H for 28F200BX-B.
6. Refer to Table 4 for valid D
IN
during a write operation.
7. Command writes for Block Erase or Word/Byte Write are only executed when V
PP
e
V
PPH
.
8. To write or erase the boot block, hold RP
Y
at V
HH
.
9. RP
Y
must be at GND
g
0.2V to meet the 1.2
m
A maximum deep power-down current.
16
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