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参数资料
| 型号： | PACDN009MR |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/7页 |
| 文件大小： | 0K |
| 描述： | IC ESD ARRAY PROT 5-CH 8MSOP |
| 标准包装： | 4,000 |
| 电压 - 反向隔离（标准值）： | 5.5V |
| 电压 - 击穿： | 6V |
| 电极标记： | 5 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
PACDN009
the effects of the parasitic series inductance inherent in the capacitor. The breakdown voltage of the zener diode should be
slightly higher than the maximum supply voltage.
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected
electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the V P pin of the Protection
Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the
ESD device to minimize stray series inductance.
Additional Information
See also ON Semiconductor Application Notes AP209, “Design Considerations for ESD Protection” and AP219, “ESD
Protection for USB 2.0 Systems”.
V P
L 2
POSITIVE SUPPLY RAIL
PATH OF ESD CURRENT PULSE I ESD
D 1
L 1
LINE BEING
PROTECTED
SYSTEM OR
CIRCUITRY
D 2
ONE
CHANNEL
OF
PACDN009
CHANNEL
INPUT
20 A
V CL
BEING
PROTECTED
V N
0A
GROUND RAIL
CHASSIS GROUND
Figure 2. Application of Positive ESD Pulse between Input Channel and Ground
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PACDN010 | 制造商:CALMIRCO 制造商全称:California Micro Devices Corp 功能描述:P/ACTIVE SCHOTTKY DIODE MEMORY BUS TERMINATOR |
| PACDN010Q/T | 制造商:CALMIRCO 制造商全称:California Micro Devices Corp 功能描述:APPLICATION SPECIFIC DIODE ARRAY|SO |
| PACDN010QR | 制造商:CALMIRCO 制造商全称:California Micro Devices Corp 功能描述:P/ACTIVE SCHOTTKY DIODE MEMORY BUS TERMINATOR |
| PACDN010QS | 制造商:CMD 功能描述: |
| PACDN010QT | 制造商:CALMIRCO 制造商全称:California Micro Devices Corp 功能描述:P/ACTIVE SCHOTTKY DIODE MEMORY BUS TERMINATOR |
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