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参数资料
| 型号： | PBF259S |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | High Voltage Transistors |
| 中文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 3/4页 |
| 文件大小： | 133K |
| 代理商： | PBF259S |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
200
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
50
30
20
h
TJ = +125
°
C
25
°
C
–55
°
C
VCE = 10 Vdc
100
C
Figure 2. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
0.2
100
50
20
1.0
Ccb
10
2.0
5.0
0.5
1.0
2.0
5.0
10
20
50
100
200
Ceb
Figure 3. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
100
70
50
30
20
10
7.0
5.0
3.0
2.0
100
70
50
30
20
10
TJ = 25
°
C
VCE = 20 V
f = 20 MHz
f
T
1.0
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
V
1.4
0
TJ = 25
°
C
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
VBE(sat) @ IC/IB = 10
1.2
1.0
0.8
0.6
0.4
0.2
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I
PBF259S
PBF259
50
Figure 5. Maximum Forward Bias
Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25
°
C)
SECOND BREAKDOWN LIMIT
100
μ
s
1.0 ms
TC = 25
°
C
TA = 25
°
C
CURVES APPLY
BELOW RATED VCEO
500
0.5
1.0
2.0
5.0
10
20
50
100
200
100
20
10
5.0
2.0
1.0
0.5
200
500
10
μ
s
100 ms
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