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参数资料
| 型号： | PBTR2045CTB |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | CONNECTOR |
| 中文描述： | 连接器 |
| 文件页数： | 3/6页 |
| 文件大小： | 42K |
| 代理商： | PBTR2045CTB |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CT, PBYR2045CTB series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
0
5
10
15
0
2
4
6
8
10
D = 1.0
0.5
0.2
0.1
PBYR1045
Rs = 0.015 Ohms
Vo = 0.42 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) (C)
150
146
142
138
134
130
T
I
D =
t
p
t
p
T
t
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR2045CT
50 C
75 C
100 C
125 C
Tj = 25 C
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
PBYR1045
Rs = 0.015 Ohms
Vo = 0.42 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) (C)
150
148
146
144
142
140
138
136
134
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR2045CT
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
PBYR2045CT
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
PBYR1645
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
October 1998
3
Rev 1.400
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