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参数资料
| 型号： | PD100MC0MP |
| 厂商： | Sharp Microelectronics |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | PHOTODIODE IR 820NM SIDE LOOK |
| 标准包装： | 1 |
| 波长： | 820nm |
| 光谱范围： | 400nm ~ 1100nm |
| 响应时间： | 10ns |
| 电压 - (Vr)（最大）： | 20V |
| 电流 - 暗（标准）： | 10nA |
| 视角： | 40° |
| 工作温度： | -30°C ~ 85°C |
| 封装/外壳： | 侧视图 |
| 其它名称： | 425-1027-1 |
PD100MC0MPx
Fig. 4 Reflow Soldering Temperature Profile
240°C MAX.
200°C
1 to 4°C/s
165°C MAX.
1 t o 4°C/s
1 to 4°C/s
25°C
10s MAX.
60s MAX.
120s MAX.
90s MAX.
Cleaning Instructions
1. Confirm this device's resistance to process chemicals before use, as certain process chemicals may affect the
optical characteristics.
2. Solvent cleaning: Solvent temperature should be 45°C or below. Immersion time should be 3 minutes or less.
3. Ultrasonic cleaning: The effect upon devices varies due to cleaning bath size, ultrasonic power output, cleaning
time, PCB size and device mounting circumstances. Sharp recommends testing using actual production condi-
tions to confirm the harmlessness of the ultrasonic cleaning methods.
4. Recommended solvent materials: Ethyl alcohol, Methyl alcohol, and Isopropyl alcohol.
Storage and Handling
1. Store these parts between 5°C and 30°C, at a relative humidity of less than 70 % .
2. After breaking the package seal, maintain the environment within 5°C to 25°C, at a relative humidity of less than
60 % , and mount the parts within two days.
3. When storing the parts after breaking the seal, Sharp recommends storage of no longer than two weeks in a dry
box or by resealing the parts in a moisture-proof bag with a desiccant. If unable to do so, bake before mounting.
4. When baking the parts before mounting, Sharp recommends baking the parts only once and only if in a metal
tray or mounted on a PCB. Recommended conditions are for 16 to 24 hours, at a temperature of 125°C.
Sheet No.: D1-A00201EN
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PD100MC0MP1 | 功能描述:光电二极管 SMT Photodiode, 20 , 820nm, 1.5Kpcs (Top Mount) T&R RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5 |
| PD100MF0MP | 功能描述:光电二极管 SMT Photodiode, 20 , 850nm, 2Kpcs (Side Mount) T&R RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5 |
| PD100MF0MP1 | 功能描述:光电二极管 SMT Photodiode, 20 , 850nm, 1.5Kpcs (Top Mount) T&R RoHS:否 制造商:Vishay Semiconductors 产品:Photodiodes 反向电压:10 V 最大暗电流:30 nA 峰值波长:565 nm 上升时间:3.1 us 下降时间:3 us 半强度角度:50 deg 封装 / 箱体:TO-5 |
| PD100-P | 制造商:Panduit Corp 功能描述: |
| PD100-Q | 制造商:Panduit Corp 功能描述:Call vendor for pricing |
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