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参数资料
| 型号： | PE42750MLAB-Z |
| 厂商： | Peregrine Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC RF SWITCH SPDT 75 OHM 12QFN |
| 标准包装： | 1 |
| 系列： | UltraCMOS™ |
| RF 型： | CATV |
| 频率： | 5MHz ~ 2.2GHz |
| 特点： | SPDT |
| 封装/外壳： | 12-WFQFN 裸露焊盘 |
| 供应商设备封装： | 12-QFN（3x3） |
| 包装： | 标准包装 |
| 其它名称： | 1046-1041-6 |
Broadband
Industrial
Developing Complementary
RF Products
Peregrine’s growing selection of products support
a broad range of applications. Our technological
innovations help maintain the competitive
specifications and functionality of our products.
Product Families
RF Switches
Digital Step Attenuators
PLL Freq. Synthesizers
Mixers
Prescalers
DTCs
DC-DC Converters
Complementary RF Products and End Markets
Mobile Wireless Wireless Test & Aerospace &
Devices Infrastructure Measurement Defense
Peregrine’s product families support a broad
The Innovative HaRP ?
Technology Invention
Peregrine’s HaRP technology enhancements
significantly improve harmonic and linearity
performance in the RF front-end. Because
UltraCMOS? technology is composed of a stack of
120
100
80
60
range of market segments
PE42540 Linearity Performance
field effect transistors manufactured on an insulating
sapphire substrate, it has an inherent ability to pass
high power RF signals. The HaRP invention allows
40
20
Nominal IIP3
[dBm]
Nominal IIP2
[dBm]
for highly linear FETs which, when stacked together,
deliver RF performance. In demanding applications
0
10.0E+3
100.0E+3
1.0E+6
10.0E+6
Frequency [Hz]
100.0E+6
1.0E+9
10.0E+9
such as RF test equipment, HaRP technology-enhanced
ATE switches settle very quickly, reducing gate lag and
HaRP? technology provides excellent linearity up to 7.5 GHz.
insertion loss drift while maintaining high linearity
and isolation over an extended frequency range. In
high-power applications, HaRP technology-enhanced
25
PE42540 Settling Time over Temperature
(Time to final value)
devices meet critical harmonics specifications with
improved power handling. In addition, the HaRP-
enabled high-throw, high-power switches for quad-
band GSM and GSM/WCDMA handset applications
have delivered a long-awaited breakthrough in
Intermodulation Distortion (IMD) handling, a
specification required by the 3GPP standards body for
GSM/WCDMA applications.
20
15
10
85C
5 25C
-40C
0
0.5 5 6 7 8
Frequency (GHz)
With tight specs over process and temperature, UltraCMOS
RFICs will change the way you design.
DuNE ? Digital Tuning
Technology
By applying our proven, patented UltraCMOS process
and HaRP switch technologies, engineers at Peregrine
developed DuNE? tuning technology, a new circuit
design technology used to develop Digitally Tunable
Capacitors (DTCs). Supporting a wide range of tuning
applications—from tuning the center frequency of
mobile TV and cellular antennas to tunable impedance
80
70
60
50
40
30
IIP3 vs. Frequency at Major Capacitance States
C0 = 1.05 pF
C5 = 1.70 pF
C10 = 2.36 pF
C15 = 3.01 pF
C20 = 3.66 pF
C25 = 4.32 pF
matching and filters—DuNE-enhanced products
offer high power handling, excellent linearity and
straightforward RF integration.
20
10
Varactor Diode Linearity
C31 = 5.10 pF
0
0
500
1000
1500
2000
2500
3000
Changing RF Design. Forever.
Frequency (MHz)
DuNE TM DTCs offer excellent linearity compared to
varactor diodes
TM
3
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