- 您现在的位置：买卖IC网 > Datasheet目录241 > PESD3V3S1UB,115 (NXP Semiconductors)DIODE ESD PROTECTION SOD523 Datasheet资料下载
参数资料
| 型号： | PESD3V3S1UB,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 10/15页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD PROTECTION SOD523 |
| 产品培训模块： | ESD Protection Diodes ESD Standards and Products |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 5.2V |
| 功率（瓦特）： | 330W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-79，SOD-523 |
| 供应商设备封装： | SOD-523 |
| 包装： | 标准包装 |
| 产品目录页面： | 1511 (CN2011-ZH PDF) |
| 其它名称： | 568-4044-6 |
NXP Semiconductors
PESDxS1UB series
ESD protection diodes in SOD523 package
7. Application information
The PESDxS1UB series is designed for unidirectional protection of one single data line
from the damage caused by ESD (ElectroStatic Discharge) and Surge Pulses. The
PESDxS1UB series may be used on lines where the signal polarity is above or below
ground. The PESDxS1UB series provides a surge capability of up to 330 Watts per line for
a 8/20 μ s waveform.
line to be protected
(positive signal polarity)
PESDxS1UB
ground
line to be protected
(negative signal polarity)
PESDxS1UB
ground
uni-directional protection of one line
006aaa002
Fig 9.
Unidirectional protection of one line
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and Surge transients.
The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESDXS1UB_SERIES_2
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 24 August 2009
10 of 15
相关PDF资料 |
PDF描述 |
|---|---|
| PESD3V3U1UA,115 | DIODE ESD PROT UNI 3.3V SOD323-2 |
| PESD3V3X1BL,315 | DIODE ESD PROT ULOW BIDIR SOD882 |
| PESD5V0F1BL,315 | DIODE FEMTOFARAD BI ESD SOD882 |
| PESD5V0L1BSF,315 | DIODE BIDIR ESD PROT SOD962 |
| PESD5V0L1UB,115 | DIODE ESD PROT LOW UNIDIR SOD523 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD3V3S1UL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:ESD protection diodes in a SOD882 package |
| PESD3V3S1UL T/R | 功能描述:TVS 二极管 - 瞬态电压抑制器 SNGLE UNI ESD DIODES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PESD3V3S1UL,315 | 功能描述:TVS 二极管 - 瞬态电压抑制器 SNGLE UNI ESD DIODES RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PESD3V3S1UL-315 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Unidirectional ESD protection diodes Rev. 3 a?? 25 October 2011 |
| PESD3V3S2UAT | 制造商:NXP Semiconductors 功能描述:DIODE TVS DUAL SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, DUAL, SOT-23 |
发布紧急采购，3分钟左右您将得到回复。