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参数资料
| 型号： | PESD5V0L5UK,132 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 9/15页 |
| 文件大小： | 0K |
| 描述： | DIODE 5FOLD ESD PROTECT SOT891 |
| 标准包装： | 5,000 |
| 系列： | * |
NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
7. Application information
The PESD3V3L5UK and the PESD5V0L5UK are designed for the protection of up to five
unidirectional data or signal lines from the damage caused by ESD and surge pulses. The
devices may be used on lines where the signal polarities are either positive or negative
with respect to ground. The PESD3V3L5UK provides a surge capability of 28 W per line
and the PESD5V0L5UK provides a surge capability of 30 W per line for an 8/20 μ s
waveform.
data
lines
PESDxL5UK
PESDxL5UK
1
2
3
6
5
4
1
2
3
6
5
4
Fig 9.
unidirectional protection of 5 lines
Application diagram
bidirectional protection of 4 lines
006aac378
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
PESD3V3L5UK_PESD5V0L5UK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
? NXP B.V. 2010. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD5V0L5UV | 制造商:NXP Semiconductors 功能描述:DIODE TVS SOT-666 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOT-666 |
| PESD5V0L5UV T/R | 功能描述:TVS二极管阵列 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD5V0L5UV,115 | 功能描述:TVS二极管阵列 DIODE ARRAY ESD RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD5V0L5UV,125 | 功能描述:ESD 抑制器 Diode TVS Quint Uni-Dir 5V 25W 6-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| PESD5V0L5UY | 制造商:NXP Semiconductors 功能描述:DIODE TVS SOT-363 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOT-363 |
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