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参数资料
| 型号： | PESD5V0V1BL,315 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | DIODE BI ESD PROTECT SOD882 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 5.8V |
| 功率（瓦特）： | 45W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-882 |
| 供应商设备封装： | SOD-882 |
| 包装： | 标准包装 |
| 其它名称： | 568-7359-6 |
PESD5V0V1BA;
PESD5V0V1BB; PESD5V0V1BL
Very low capacitance bidirectional ESD protection diodes
Rev. 2 — 9 November 2012
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
Table 1.
Product overview
Type number
Package
NXP
JEITA
Package configuration
PESD5V0V1BA
PESD5V0V1BB
PESD5V0V1BL
SOD323
SOD523
SOD882
SC-76
SC-79
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very small
ultra small and flat lead
leadless ultra small
1.2 Features and benefits
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Bidirectional ESD protection of one line
Very low diode capacitance: C d = 11 pF
Max. peak pulse power: P PP = 45 W
Low clamping voltage: V CL = 12.5 V
Ultra low leakage current: I RM < 1 nA
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ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I PP = 4.8 A
AEC-Q101 qualified
1.3 Applications
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Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Subscriber Identity Module (SIM) card
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Communication systems
Portable electronics
10/100 Mbit/s Ethernet
FireWire
protection
1.4 Quick reference data
Table 2. Quick reference data
T amb = 25 ? C unless otherwise specified.
Symbol
V RWM
C d
Parameter
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; V R = 0 V
Min
-
-
Typ
-
11
Max
5
13
Unit
V
pF
相关PDF资料 |
PDF描述 |
|---|---|
| PESD5V0V1BLD,315 | DIODE ESD PROTECTION SOD-882 |
| PESD5V0V1BSF,315 | DIODE BIDIR ESD PROT SOD962 |
| PESD5V0X1BL,315 | DIODE ESD PROT BI-DIR 5V SOD-882 |
| PESD5V0X1BQ,115 | DIODE ESD PROT BI-DIR 5V SOT-663 |
| PESD5V0X1UAB,115 | DIODE ESD PROT UNIDIR 5V SOD523 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD5V0V1BLD | 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD882 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD882 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD882, Diode Type:ESD Protection, Clamping Voltage Vc Max:12.5V, Diode Case Style:SOD-882D, No. of Pins:2, MSL:MSL 1 - Unlimited , RoHS Compliant: Yes |
| PESD5V0V1BLD,315 | 功能描述:ESD 抑制器 7.8 V 13 pF RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| PESD5V0V1BSF | 制造商:NXP Semiconductors 功能描述:DIODE ESD 5V BIIDIR 3.5PF SOD962 制造商:NXP Semiconductors 功能描述:DIODE, ESD, 5V, BIIDIR, 3.5PF, SOD962 |
| PESD5V0V1BSF,315 | 功能描述:ESD 抑制器 BIDIRECTIONAL CAPACITANCE ESD RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| PESD5V0V1BSF_11 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low profile bidirectional very low capacitance ESD protection diode |
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