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参数资料
| 型号： | PH2226-50M |
| 英文描述： | Zero-Drift Operational Amplifier; Package: PDIP; No of Pins: 14; Temperature Range: 0°C to +70°C |
| 中文描述： | 晶体管|晶体管|叩| 63V五（巴西）总裁| 6A条一（c）|佛91VAR |
| 文件页数： | 1/2页 |
| 文件大小： | 211K |
| 代理商： | PH2226-50M |
Radar Pulsed Power Transistor, 110 Watts,
2.25-2.55 GHz, 100
μ
S Pulse, 10% Duty
Features
Q
NPN Silicon Microwave Power Transistor
Q
Common Base Configuration
Q
Broadband Class C Operation
Q
Diffused Emitter Ballasting Resistors
Q
Gold Metalization System
Q
Internal Input and Output Impedance Matching
Q
Hermetic Metal/Ceramic Package
P
Outline Drawing
8/21/02
Rev. 3
Electrical Characteristics at 25 °C
Parameter
Symbol
Min.
Max.
Units
Test Conditions
Collector-Emitter Breakdown
Voltage
BV
CES
63
-
V
I
C
=40 mA
Collector-Emitter Leakage
Current
I
CES
-
7.5
mA
V
CE
=36 V
Thermal Resistance
R
TH(JC)
-
0.3
°C/W
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Output Power
P
O
110
-
W
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Power Gain
G
P
7.4
-
dB
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Collector Efficiency
η
40
-
%
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Input Return Loss
RL
9
-
dB
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Load Mismatch Tolerance
VSWR-T
-
3:1
-
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Load Mismatch Stability
VSWR-S
-
1.5:1
-
V
CC
=36 V, P
IN
= 20 W, Freq= 2.25 and 2.55 GHz
Absolute Maximum Ratings at 25 °C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
63
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
15
A
Total Power Dissipation
@ +45 °C
Storage Temperature
P
TOT
583
W
T
STG
-65 to +200
°C
Junction Temperature
T
j
200
°C
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