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参数资料
| 型号： | PHB60N06LT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 58 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, SOT-404, 3 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 71K |
| 代理商： | PHB60N06LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP60N06LT, PHB60N06LT
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
TYP.
-
MAX.
1.0
UNIT
K/W
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint
60
50
-
-
K/W
K/W
ESD LIMITING VALUE
SYMBOL PARAMETER
V
C
Electrostatic discharge
capacitor voltage, all pins
CONDITIONS
Human body model (100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)GSS
Gate-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
10
TYP. MAX. UNIT
-
-
-
-
-
-
V
V
V
T
j
= -55C
I
G
=
±
1 mA;
V
DS
= V
GS
; I
D
= 1 mA
1.0
0.5
-
-
-
-
20
-
-
-
-
-
-
-
1.5
-
-
15
16
-
52
0.02
-
0.05
-
37
10
17
2.0
-
2.3
20
18
42
-
1
20
10
500
-
-
-
V
V
V
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 5 V; I
D
= 25 A
V
GS
= 10 V; I
D
= 25 A
m
m
m
S
μ
A
μ
A
μ
A
μ
A
nC
nC
nC
T
j
= 175C
g
fs
I
GSS
Forward transconductance
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
V
DS
= 25 V; I
D
= 25 A
T
j
= 175C
I
DSS
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 50 A; V
DD
= 44 V; V
GS
= 5 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DD
= 30 V; I
D
= 25 A;
V
= 5 V; R
= 10
Resistive load
-
-
-
-
-
-
28
110
95
70
3.5
4.5
40
160
135
90
-
-
ns
ns
ns
ns
nH
nH
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1800
350
170
2400
420
235
pF
pF
pF
January 1998
2
Rev 1.300
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PHB60N06LTT/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 58A I(D) | SOT-404 |
| PHB60N06T | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHB63NQ03LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS logic level FET |
| PHB64N03LT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 64A I(D) | TO-263AB |
| PHB65N06LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
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