- 您现在的位置：买卖IC网 > PDF目录367942 > PHP60N06T (NXP SEMICONDUCTORS) TrenchMOS transistor Standard level FET PDF资料下载
参数资料
| 型号： | PHP60N06T |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 58 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 64K |
| 代理商： | PHP60N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP60N06T
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor in a plastic envelope using
’
trench
’ technology.
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
for
use
converters and
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
58
150
175
20
V
A
W
C
m
The
device
in
DC-DC
V
GS
= 10 V
general purpose
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
58
40
232
150
175
UNIT
V
V
V
A
A
A
W
C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
1.0
UNIT
K/W
R
th j-a
in free air
60
-
K/W
d
g
s
1 2 3
tab
December 1997
1
Rev 1.100
相关PDF资料 |
PDF描述 |
|---|---|
| PHP65N06LT | TrenchMOS transistor Logic level FET |
| PHP65N06T | TrenchMOS transistor Standard level FET |
| PHP69N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶体管标准电平场效应管) |
| PHP69NLT | TrenchMOS transistor Logic level FET |
| PHP6N10E | PowerMOS transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PHP63NQ03LT | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP63NQ03LT,127 | 功能描述:MOSFET PHP63NQ03LT/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHP63NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V TO-220 |
| PHP65N06LT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| PHP65N06T | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
发布紧急采购，3分钟左右您将得到回复。