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参数资料
| 型号： | PHP6N10E |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 6.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 53K |
| 代理商： | PHP6N10E |
Philips Semiconductors
Product specification
PowerMOS transistor
PHP6N10E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic
envelope
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies
(SMPS),
circuits
and
general
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
featuring
high
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
100
6.3
50
0.54
V
A
W
motor
control
purpose
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
Continuous drain current
CONDITIONS
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
T
mb
> 25 C
MIN.
-
-
-
-
-
-
-
MAX.
6.3
4.5
25
50
0.33
±
30
30
UNIT
A
A
A
W
W/K
V
mJ
I
DM
P
D
P
D
/
T
mb
Linear derating factor
V
GS
Gate-source voltage
E
AS
Single pulse avalanche
energy
I
AS
Peak avalanche current
Pulsed drain current
Total dissipation
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
-
6.3
A
T
j
, T
stg
Operating junction and
storage temperature range
- 55
175
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
3
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
March 1997
1
Rev 1.000
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| PHP6N50E | PowerMOS transistors Avalanche energy rated |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PHP6N28T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 5.5A I(D) | TO-220AB |
| PHP6N50E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP6N60E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP6NA60E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistors Low capacitance Avalanche energy rated |
| PHP6ND50E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
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