- 您现在的位置：买卖IC网 > PDF目录367942 > PHB6N50E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF资料下载
参数资料
| 型号： | PHB6N50E |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 5.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOT-404, 3 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 77K |
| 代理商： | PHB6N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP6N50E, PHB6N50E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
V
DSS
= 500 V
I
D
= 5.9 A
R
DS(ON)
≤
1.5
GENERAL DESCRIPTION
N-channel,enhancement modefield-effectpower transistor,intendedforusein off-lineswitchedmode powersupplies,
T.V.and computer monitor powersupplies, d.c. tod.c.converters, motor controlcircuits and generalpurpose switching
applications.
The PHP6N50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6N50E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
±
30
5.9
3.7
24
125
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
d
g
s
1 2 3
tab
1
3
tab
2
December 1998
1
Rev 1.200
相关PDF资料 |
PDF描述 |
|---|---|
| PHP6N60E | PowerMOS transistors Avalanche energy rated |
| PHB6N60E | PowerMOS transistors Avalanche energy rated |
| PHP6NA60E | PowerMOS transistors Low capacitance Avalanche energy rated |
| PHP6ND50E | PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB6ND50E | PowerMOS transistors FREDFET, Avalanche energy rated |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PHB6N60E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB6N60T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | SOT-404 |
| PHB6ND50E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB71NQ03LT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
| PHB71NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V D2-PAK |
发布紧急采购，3分钟左右您将得到回复。