参数资料
型号: PHP60N06T
厂商: NXP SEMICONDUCTORS
元件分类: JFETs
英文描述: TrenchMOS transistor Standard level FET
中文描述: 58 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 6/8页
文件大小: 64K
代理商: PHP60N06T
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP60N06T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 50 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 49 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
Fig.17. Switching test circuit.
0
10
20
30
40
50
0
2
4
6
8
10
12
VGS/V
QG/nC
VDS = 14V
VDS = 44V
20
40
60
80
100
Tmb / C
120
140
160
180
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
RD
T.U.T.
VDD
RG
VDS
+
-
VGS
0
December 1997
6
Rev 1.100
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