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参数资料
| 型号： | PHD55N03LTA |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | PLASTIC, SC-63, DPAK-3 |
| 文件页数： | 1/14页 |
| 文件大小： | 296K |
| 代理商： | PHD55N03LTA |
PHP55N03LTA;PHB55N03LTA;
PHD55N03LTA
N-channel enhancement mode field-effect transistor
Rev. 02 — 2 August 2001
Product data
1.
Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
PHP55N03LTA in a SOT78 (TO-220AB)
PHB55N03LTA in a SOT404 (D
2
-
PAK)
PHD55N03LTA in a SOT428 (D-PAK).
2.
Features
I
Low on-state resistance
I
Fast switching.
3.
Applications
I
Computer motherboard high frequency DC to DC converters.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1.
TrenchMOS is a trademark of Royal Phillips Electronics.
Table 1:
Pin
Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
SOT404 (D
2
-
PAK)
SOT428 (D-PAK)
2
drain (d)
[1]
3
source (s)
mb
mounting base,
connected to drain (d)
MBK106
1 2
mb
3
1
3
2
MBK116
mb
MBK091
Top view
1
3
mb
2
s
d
g
MBB076
相关PDF资料 |
PDF描述 |
|---|---|
| PHP55N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶体管标准电平场效应管) |
| PHP5N20E | PowerMOS transistor |
| PHP5N40E | PowerMOS transistor |
| PHP60N06LT | TrenchMOS transistor Logic level FET |
| PHB60N06LT | TrenchMOS transistor Logic level FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PHD55N03LTA,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PHD55N04LT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 35V V(BR)DSS | 55A I(D) | TO-252AA |
| PHD5N20E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHD63NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V D-PAK |
| PHD63NQ03LT,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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