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参数资料
| 型号： | PHN603S |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | TrenchMOS/ Schottky Diode Array Three Phase Brushless d.c. Motor Driver(TrenchMOS/肖特基二极管阵列三相位无刷d.c.马达驱动器) |
| 中文描述： | 5.5 A, 25 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AD |
| 封装： | PLASTIC, SO-24 |
| 文件页数： | 2/7页 |
| 文件大小： | 116K |
| 代理商： | PHN603S |
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
PHN603S
THERMAL RESISTANCES
SYMBOL
R
th j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
TYP.
MAX.
UNIT
Per device
75
42
-
-
K/W
K/W
All devices conducting
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 1 mA
MIN.
25
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 1 mA
1.0
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.8
-
30
50
50
10
0.2
5
17
1.7
5.2
8
11
31
17
650
320
130
-
-
V
V
T
j
= 150C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
D
= 5 A
V
GS
= 4.5 V; I
D
= 2.5 A
V
GS
= 10 V; I
= 5 A; T
j
= 150C
35
55
60
100
1.0
10
-
-
-
-
-
-
-
-
-
-
m
m
m
nA
mA
mA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
I
GSS
I
DSS
Gate source leakage current V
GS
=
±
20 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Input capacitance
Output capacitance
Feedback capacitance
V
DS
= 25 V; V
GS
= 0 V;
T
j
= 100C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
C
iss
C
oss
C
rss
I
D
= 1 A; V
DD
= 20 V; V
GS
= 10 V
V
DD
= 20 V; I
D
= 1 A;
V
= 10 V; R
G
= 6
Resistive load
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
F
Continuous forward diode
current
I
FRM
Repetitive peak forward diode
current
V
F
Diode forward voltage
CONDITIONS
T
a
= 25 C
MIN.
-
TYP.
-
MAX.
5.5
UNIT
A
-
-
22
A
I
F
= 2.5 A; V
GS
= 0 V
I
F
= 2.5 A; V
GS
= 0 V, T
j
= 100 C
I
F
= 0.5 A to I
R
= 0.5 A
-
-
-
0.4
0.3
20
0.6
0.55
-
V
V
ns
t
rr
Reverse recovery time
October 1998
2
Rev 1.000
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